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Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
39
10
19
Single
600
1.2
FEATURES
•
•
•
•
•
•
•
Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30 V, V
GS
Rating
Reduced C
iss
, C
oss
, C
rss
Extremely High Frequency Operation
Repetitive Avalanche Rated
Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
TO-220AB
D
G
S
G D S
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
LIMIT
600
± 30
4
2.9
25
1.0
530
6.2
13
125
3.0
- 55 to + 150
300
d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
T
C
= 25 °C
for 10 s
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 25 mH, R
g
= 25
,
I
AS
= 6.2 A (see fig. 12).
c. I
SD
6.2 A, dI/dt
80 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
1
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THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.50
-
MAX.
62
-
1.0
°C/W
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
J
= 25 °C, I
S
= 4 A, V
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
=
20
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 3.7 A
b
V
DS
= 100 V, I
D
= 3.7 A
b
600
-
2.0
-
-
-
-
3.7
-
0.70
-
-
-
-
-
-
-
-
4.0
± 100
100
500
1.2
-
V
V/°C
V
nA
μA
S
V
GS
= 0 V
V
DS
= 25 V
f = 1.0 MHz, see fig. 5
-
-
-
-
1100
140
15
-
-
-
12
20
27
17
4.5
7.5
-
-
-
39
10
19
-
-
-
-
-
nH
-
ns
nC
pF
V
GS
= 10 V
I
D
= 4 A, V
DS
= 360 V,
see fig. 6 and 13
b
-
-
-
V
DD
= 300 V, I
D
= 4 A
R
g
= 9.1
,
R
D
= 47, see fig. 10
b
-
-
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
-
G
S
-
-
-
b
-
-
-
440
2.1
4.0
A
25
1.5
680
3.2
V
ns
μC
G
S
GS
= 0 V
b
T
J
= 25 °C, I
F
= 4 A, dI/dt = 100 A/μs
-
-
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
2
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TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
1
I
D
, Drain Current (A)
10
0
4.5 V
I
D
, Drain Current (A)
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
Top
10
1
150
°
C
25
°
C
10
0
10
-1
20 µs Pulse Width
T
C
=
25 °C
10
-1
10
0
10
1
10
2
10
-2
10
-2
91114_01
10
-1
4
91114_03
20 µs Pulse Width
V
DS
=
100 V
5
6
7
8
9
10
V
DS
, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
V
GS,
Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
10
1
I
D
, Drain Current (A)
10
0
V
GS
Top
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
I
D
= 4 A
V
GS
= 10 V
4.5 V
10
-1
10
-2
10
-2
91114_02
20 µs Pulse Width
T
C
=
150 °C
10
-1
10
0
10
1
10
2
0.0
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160
V
DS,
Drain-to-Source Voltage (V)
91114_04
T
J,
Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
3
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2400
2000
I
SD
, Reverse Drain Current (A)
Capacitance (pF)
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
iss
1600
1200
C
oss
800
400
0
10
0
10
1
C
rss
10
1
150
°
C
25
°
C
10
0
0.6
91114_07
V
GS
= 0 V
0.8
1.0
1.2
1.4
91114_05
V
DS,
Drain-to-Source Voltage (V)
V
SD
, Source-to-Drain Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
V
GS
, Gate-to-Source Voltage (V)
I
D
= 3.2 A
V
DS
= 300 V
10
3
5
2
Operation in this area limited
by R
DS(on)
16
I
D
, Drain Current (A)
10
2
5
2
V
DS
= 240 V
12
V
DS
= 180 V
10
5
2
10
µs
100
µs
1
ms
10
ms
T
C
= 25
°C
T
J
= 150
°C
Single Pulse
0.1
2
5
8
1
5
2
4
For test circuit
see figure 13
0.1
5
2
0
0
91114_06
10
-2
8
16
24
32
40
91114_08
1
2
5
10
2
5
10
2
2
5
10
3
2
5
10
4
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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R
D
V
DS
V
GS
R
g
D.U.T.
+
-
V
DD
10 V
5.0
4.0
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
I
D
, Drain Current (A)
3.5
3.0
2.5
V
DS
2.0
1.0
0.0
25
90 %
Fig. 10a - Switching Time Test Circuit
50
75
100
125
150
91114_09
T
C
, Case Temperature (°C)
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
0
−
0.5
P
DM
0.2
0.1
0.1
0.05
0.02
0.01
10
-2
10
-5
10
-4
10
-3
10
-2
0.1
Single Pulse
(Thermal Response)
t
1
t
2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
1
10
91114_11
t
1
, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
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