IRFE430SCVPBF datasheet, PDF - EEWORLD Datasheet

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IRFE430SCVPBF: DescriptionPower Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18; CategoryDiscrete semiconductor The transistor; File Size164KB，7 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRFE430SCVPBF Overview

Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18

IRFE430SCVPBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	LCC
package instruction	CHIP CARRIER, R-CQCC-N15
Contacts	18
Reach Compliance Code	compliant
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	0.31 mJ
Shell connection	SOURCE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (ID)	2.5 A
Maximum drain-source on-resistance	1.725 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CQCC-N15
Number of components	1
Number of terminals	15
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	11 A
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	QUAD
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

IRFE430SCVPBF Related Products

	IRFE430SCVPBF	IRFE430SCXPBF	IRFE430PBF	IRFE430SCSPBF	IRFE430SCS
Description	Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18	Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18	Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18	Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18	Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Contains lead
Is it Rohs certified?	conform to	conform to	conform to	conform to	incompatible
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	LCC	LCC	LCC	LCC	LCC
package instruction	CHIP CARRIER, R-CQCC-N15	CHIP CARRIER, R-CQCC-N15	CHIP CARRIER, R-CQCC-N15	CHIP CARRIER, R-CQCC-N15	CHIP CARRIER, R-CQCC-N15
Contacts	18	18	18	18	18
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
Other features	AVALANCHE RATED	AVALANCHE RATED	HIGH RELIABILITY	AVALANCHE RATED	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	0.31 mJ	0.31 mJ	0.31 mJ	0.31 mJ	0.31 mJ
Shell connection	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V	500 V	500 V	500 V	500 V
Maximum drain current (ID)	2.5 A	2.5 A	2.5 A	2.5 A	2.5 A
Maximum drain-source on-resistance	1.725 Ω	1.725 Ω	1.725 Ω	1.725 Ω	1.725 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CQCC-N15	R-CQCC-N15	R-CQCC-N15	R-CQCC-N15	R-CQCC-N15
Number of components	1	1	1	1	1
Number of terminals	15	15	15	15	15
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
Peak Reflow Temperature (Celsius)	260	260	260	260	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	11 A	11 A	11 A	11 A	11 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	QUAD	QUAD	QUAD	QUAD	QUAD
Maximum time at peak reflow temperature	40	40	40	40	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON

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