K6F8016R6A-EF70T datasheet, PDF

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K6F8016R6A-EF70T: DescriptionStandard SRAM, 512KX16, 70ns, CMOS, PBGA48, 7 X 9 MM, 0.75 MM PITCH, TBGA-48; Categorystorage storage; File Size118KB，9 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K6F8016R6A-EF70T Overview

Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, 7 X 9 MM, 0.75 MM PITCH, TBGA-48

K6F8016R6A-EF70T Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
package instruction	VFBGA, BGA48,6X8,30
Reach Compliance Code	unknown
Maximum access time	70 ns
I/O type	COMMON
JESD-30 code	R-PBGA-B48
JESD-609 code	e0
length	9 mm
memory density	8388608 bit
Memory IC Type	STANDARD SRAM
memory width	16
Humidity sensitivity level	3
Number of functions	1
Number of terminals	48
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	VFBGA
Encapsulate equivalent code	BGA48,6X8,30
Package shape	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	1.8 V
Certification status	Not Qualified
Maximum seat height	1 mm
Minimum standby current	1 V
Maximum slew rate	0.025 mA
Maximum supply voltage (Vsup)	2.2 V
Minimum supply voltage (Vsup)	1.65 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	0.75 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
width	7 mm

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K6F8016R6A Family

Document Title

CMOS SRAM

512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Revision History

Revision No. History

0.0

0.1

Initial draft

Revise

- Change package type from FBGA to TBGA

Finalize

- Improved I

CC1

from 3 to 2mA

- Removed I

, I

Draft Date

August 21, 2000

September 28, 2000

Remark

Preliminary

1.0

February 15, 2000

Final

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices.

Revision 1.0

February 2001

K6F8016R6A-EF70T Related Products

	K6F8016R6A-EF70T	K6F8016R6A-EF85T	K6F8016R6A-EF7000
Description	Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, 7 X 9 MM, 0.75 MM PITCH, TBGA-48	Standard SRAM, 512KX16, 85ns, CMOS, PBGA48, 7 X 9 MM, 0.75 MM PITCH, TBGA-48	Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, 7 X 9 MM, 0.75 MM PITCH, TBGA-48
Is it Rohs certified?	incompatible	incompatible	incompatible
package instruction	VFBGA, BGA48,6X8,30	VFBGA, BGA48,6X8,30	VFBGA, BGA48,6X8,30
Reach Compliance Code	unknown	unknown	unknown
Maximum access time	70 ns	85 ns	70 ns
I/O type	COMMON	COMMON	COMMON
JESD-30 code	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48
JESD-609 code	e0	e0	e1
length	9 mm	9 mm	9 mm
memory density	8388608 bit	8388608 bit	8388608 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	16	16	16
Humidity sensitivity level	3	3	3
Number of functions	1	1	1
Number of terminals	48	48	48
word count	524288 words	524288 words	524288 words
character code	512000	512000	512000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C
organize	512KX16	512KX16	512KX16
Output characteristics	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	VFBGA	VFBGA	VFBGA
Encapsulate equivalent code	BGA48,6X8,30	BGA48,6X8,30	BGA48,6X8,30
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	260	260	260
power supply	1.8 V	1.8 V	1.8 V
Certification status	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1 mm	1 mm	1 mm
Minimum standby current	1 V	1 V	1 V
Maximum slew rate	0.025 mA	0.02 mA	0.025 mA
Maximum supply voltage (Vsup)	2.2 V	2.2 V	2.2 V
Minimum supply voltage (Vsup)	1.65 V	1.65 V	1.65 V
Nominal supply voltage (Vsup)	1.8 V	1.8 V	1.8 V
surface mount	YES	YES	YES
technology	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	TIN SILVER COPPER
Terminal form	BALL	BALL	BALL
Terminal pitch	0.75 mm	0.75 mm	0.75 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	40	40	40
width	7 mm	7 mm	7 mm
Maker	SAMSUNG	-	SAMSUNG

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