AON6564
30V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5V
GS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
30V
32A
< 5mΩ
< 8.5mΩ
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested
100% R
g
Tested
DFN5X6
Top View
Bottom View
1
2
3
4
Top View
D
8
7
6
5
G
S
PIN1
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.05mH
V
DS
Spike
Power Dissipation
Power Dissipation
B
C
C
Maximum
30
±20
32
25
128
29
23
36
32
36
25
10
6
3.8
-55 to 150
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
E
AS
V
SPIKE
P
D
P
DSM
T
J
, T
STG
100ns
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
A
A
mJ
V
W
W
°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
17
44
3.5
Max
21
53
5
Units
°
C/W
°
C/W
°
C/W
Rev0: Dec, 2012
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Page 1 of 6
AON6564
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=30V, V
GS
=0V
C
T
J
=55°
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS,
I
D
=250µA
V
GS
=10V, I
D
=20A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=20A
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=20A
I
S
=1A,V
GS
=0V
T
J
=125°
C
1.6
2
4
5.4
6.7
83
0.7
1
30
1300
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
0.7
530
75
1.5
18.3
V
GS
=10V, V
DS
=15V, I
D
=20A
8.5
4.8
2.5
7.5
V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
GEN
=3Ω
I
F
=20A, dI/dt=500A/µs
1in
2
Min
30
Typ
Max
Units
V
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
1
5
100
2.4
5
7
8.5
µA
nA
V
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
1550
700
130
2.3
33
17
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
4.8
23.3
4.5
14
25
A. The value of R
θJA
is measured with the device mounted on
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T
J(MAX)
=150°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Dec, 2012
www.aosmd.com
Page 2 of 6
AON6564
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V
80
4.5V
6V
8V
80
4V
60
3.5V
40
I
D
(A)
100
V
DS
=5V
60
I
D
(A)
40
20
V
GS
=3V
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
10
8
R
DS(ON)
(mΩ)
Ω
6
4
V
GS
=10V
2
0
0
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
5
10
Normalized On-Resistance
20
125°C
25°C
0
0
1
2
3
4
5
6
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
1.6
V
GS
=4.5V
V
GS
=10V
I
D
=20A
1.4
1.2
1
V
GS
I
D
=20A
17
5
2
10
=4.5V
0.8
0
25
50
75
100
125
150
175
0
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
12
I
D
=20A
1.0E+02
1.0E+01
9
R
DS(ON)
(mΩ)
Ω
125°C
6
I
S
(A)
40
1.0E+00
1.0E-01
1.0E-02
25°C
125°C
3
25°C
1.0E-03
1.0E-04
0
2
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
4
1.0E-05
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.0
0.2
Rev0: Dec, 2012
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Page 3 of 6
AON6564
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=15V
I
D
=20A
Capacitance (pF)
1800
1600
1400
1200
1000
800
600
400
200
0
0
10
15
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
5
20
0
0
10
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
30
C
rss
C
oss
C
iss
8
V
GS
(Volts)
6
4
2
1000.0
100.0
I
D
(Amps)
10µs
Power (W)
200
160
120
80
40
0
0.01
0.1
1
V
DS
(Volts)
10
100
R
DS(ON)
limited
10.0
10µs
100µs
1ms
10ms
T
J(Max)
=150°C
T
C
=25°C
DC
1.0
0.1
0.0
T
J(Max)
=150°C
T
C
=25°C
0.0001
0.001
0.01
0.1
1
10
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
R
θJC
=5°C/W
0.1
Single Pulse
P
D
T
on
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev0: Dec, 2012
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Page 4 of 6
AON6564
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
40
Power Dissipation (W)
20
Current rating I
D
(A)
0
75
100
125
T
CASE
(°C)
°
Figure 12: Power De-rating (Note F)
25
50
150
30
20
10
10
0
0
0
50
75
100
125
T
CASE
(°C)
°
Figure 13: Current De-rating (Note F)
25
150
10000
T
A
=25°C
1000
Power (W)
100
10
1
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
R
θJA
=53°C/W
40
0.1
P
D
T
on
T
0.01
Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev0: Dec, 2012
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Page 5 of 6
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