Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, MTP, MODULE-13
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | Vishay |
| package instruction | FLANGE MOUNT, R-PUFM-P13 |
| Reach Compliance Code | compliant |
| Other features | UL APPROVED, LOW CONDUCTION LOSS |
| Shell connection | ISOLATED |
| Maximum collector current (IC) | 30 A |
| Collector-emitter maximum voltage | 1200 V |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
| JESD-30 code | R-PUFM-P13 |
| Number of components | 6 |
| Number of terminals | 13 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| surface mount | NO |
| Terminal form | PIN/PEG |
| Terminal location | UPPER |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | POWER CONTROL |
| Transistor component materials | SILICON |
| Nominal off time (toff) | 361 ns |
| Nominal on time (ton) | 113 ns |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD