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U630H16D1C35

Description
Non-Volatile SRAM, 2KX8, 35ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28
Categorystorage    storage   
File Size202KB,14 Pages
ManufacturerZentrum Mikroelektronik Dresden AG (IDT)
Download Datasheet Parametric View All

U630H16D1C35 Overview

Non-Volatile SRAM, 2KX8, 35ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28

U630H16D1C35 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerZentrum Mikroelektronik Dresden AG (IDT)
Parts packaging codeDIP
package instructionDIP, DIP28,.6
Contacts28
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time35 ns
JESD-30 codeR-PDIP-T28
JESD-609 codee0
length37.1 mm
memory density16384 bit
Memory IC TypeNON-VOLATILE SRAM
memory width8
Humidity sensitivity level3
Number of functions1
Number of terminals28
word count2048 words
character code2000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2KX8
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.6
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum seat height5.1 mm
Maximum standby current0.001 A
Maximum slew rate0.08 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width15.24 mm
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