Power Field-Effect Transistor, 30A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, COMPACT, TO-3P, 3 PIN
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | POWEREX |
Parts packaging code | TO-3P |
package instruction | FLANGE MOUNT, R-PSFM-T3 |
Contacts | 3 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Shell connection | DRAIN |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 150 V |
Maximum drain current (Abs) (ID) | 30 A |
Maximum drain current (ID) | 30 A |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PSFM-T3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Polarity/channel type | P-CHANNEL |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
transistor applications | SWITCHING |
Transistor component materials | SILICON |