MRF616 datasheet, PDF - EEWORLD Datasheet

MRF616: DescriptionRF Small Signal Bipolar Transistor, 0.25A I(C), Ultra High Frequency Band, Silicon, NPN,; CategoryDiscrete semiconductor The transistor; File Size12KB，1 Pages; ManufacturerAdvanced Semiconductor, Inc.

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MRF616 Overview

RF Small Signal Bipolar Transistor, 0.25A I(C), Ultra High Frequency Band, Silicon, NPN,

Parameter Name	Attribute value
Maker	Advanced Semiconductor, Inc.
package instruction	DISK BUTTON, O-CRDB-F4
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.25 A
Collector-emitter maximum voltage	16 V
Configuration	Single
Minimum DC current gain (hFE)	20
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	O-CRDB-F4
Number of terminals	4
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Polarity/channel type	NPN
Maximum power dissipation(Abs)	5 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	RADIAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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