Flash, 128KX8, 120ns, CDIP32, 0.600 INCH, SINGLE CAVITY, HERMETIC SEALED, SIDE BRAZED, CERAMIC, DIP-32
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Microsemi |
| Parts packaging code | DIP |
| package instruction | 0.600 INCH, SINGLE CAVITY, HERMETIC SEALED, SIDE BRAZED, CERAMIC, DIP-32 |
| Contacts | 32 |
| Reach Compliance Code | compliant |
| ECCN code | 3A001.A.2.C |
| Maximum access time | 120 ns |
| JESD-30 code | R-CDIP-T32 |
| memory density | 1048576 bit |
| Memory IC Type | FLASH |
| memory width | 8 |
| Number of functions | 1 |
| Number of terminals | 32 |
| word count | 131072 words |
| character code | 128000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 128KX8 |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | DIP |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Programming voltage | 5 V |
| Certification status | Not Qualified |
| Maximum seat height | 5.13 mm |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.5 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| type | NOR TYPE |
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