STB26NM60N, STF26NM60N, STI26NM60N
STP26NM60N, STW26NM60N
N-channel 600 V, 0.135
Ω
typ., 20 A MDmesh™ II Power MOSFET
in D
2
PAK, I
2
PAK, TO-220, TO-220FP and TO-247 packages
Datasheet — production data
Features
Type
STB26NM60N
STF26NM60N
STI26NM60N
STP26NM60N
STW26NM60N
■
■
■
TAB
TAB
V
DSS
600 V
600 V
600 V
600 V
600 V
R
DS(on)
max
< 0.165
Ω
< 0.165
Ω
< 0.165
Ω
< 0.165
Ω
< 0.165
Ω
I
D
3
20 A
20 A
20 A
20 A
20 A
TAB
1
2
3
12
3
1
2
TO-220FP
I²PAK
TO-220
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Figure 1.
3
1
2
1
3
D²PAK
TO-247
Application
■
Internal schematic diagram
Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET applies a new vertical structure to the
company’s strip layout to yield a device with one
of the world’s lowest on-resistance and gate
charge, making it suitable for the most demanding
high-efficiency converters.
Table 1.
Device summary
Order codes
Marking
Package
D²PAK
TO-220FP
26NM60N
I²PAK
Tube
TO-220
TO-247
Packaging
Tape and reel
STB26NM60N
STF26NM60N
STI26NM60N
STP26NM60N
STW26NM60N
June 2012
This is information on a product in full production.
Doc ID 15642 Rev 5
1/23
www.st.com
23
Contents
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1
Electrical characteristics (curves)
............................ 7
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
2/23
Doc ID 15642 Rev 5
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
Parameter
D²PAK, I²PAK,
TO-220, TO-247
600
± 25
20
12.6
80
140
1.12
15
2500
–55 to 150
150
20
(1)
12.6
(1)
80
(1)
35
0.28
Unit
TO-220FP
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
V
DS
V
GS
I
D
I
D
I
DM (2)
P
TOT
dv/dt
(3)
V
ISO
T
stg
T
j
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Derating factor
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;T
C
=25 °C)
Storage temperature
Max. operating junction temperature
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. I
SD
≤
20 A, di/dt
≤
400 A/µs, V
DSpeak
≤
V
(BR)DSS
, V
DD
=
80% V
(BR)DSS
Table 3.
Symbol
Thermal data
Value
Parameter
TO-247 TO-220 I²PAK D²PAK TO-220FP
Thermal resistance junction-
case max
Thermal resistance junction-
ambient max
Thermal resistance junction-pcb
max
50
Unit
R
thj-case
R
thj-amb
R
thj-pcb(1)
0.89
62.5
30
3.6
62.5
°C/W
°C/W
°C/W
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec.
Doc ID 15642 Rev 5
3/23
Electrical ratings
Table 4.
Symbol
I
AS
E
AS
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
(starting T
J
=25 °C, I
D
=I
AS
, V
DD
=50 V)
Value
6
610
Unit
A
mJ
4/23
Doc ID 15642 Rev 5
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Electrical characteristics
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 5.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
On/off states
Parameter
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
GS
= 0)
Gate-body leakage
current (V
DS
= 0)
Gate threshold voltage
Static drain-source on-
resistance
Test conditions
I
D
= 1 mA, V
GS
= 0
V
DS
= 600 V
V
DS
= 600 V, T
C
= 125 °C
V
GS
= ± 25 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 10 A
2
3
Min.
600
1
100
±0.1
4
Typ.
Max.
Unit
V
µA
µA
µA
V
Ω
0.135 0.165
Table 6.
Symbol
C
iss
C
oss
C
rss
C
oss eq. (1)
Q
g
Q
gs
Q
gd
R
g
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Test conditions
Min.
Typ.
1800
115
1.1
310
60
8.5
30
2.8
Max. Unit
pF
pF
pF
pF
nC
nC
nC
Ω
V
DS
= 50 V, f = 1 MHz,
V
GS
= 0
-
-
V
GS
= 0, V
DS
= 0 to 480 V
V
DD
= 480 V, I
D
= 20 A,
V
GS
= 10 V,
(see Figure 19)
f=1 MHz Gate DC Bias=0
Test signal level = 20 mV
open drain
-
-
-
-
-
-
1. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DS
Table 7.
Symbol
t
d(on)
t
r
t
d(off)
t
f
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V
DD
= 300 V, I
D
= 10 A
R
G
= 4.7
Ω
V
GS
= 10 V
(see Figure 18)
Min.
Typ.
13
25
85
50
Max. Unit
ns
ns
ns
ns
-
-
Doc ID 15642 Rev 5
5/23
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