The UT54ACS253 and the UT54ACTS253 are 1-line to 4-line
multiplexers that contain drivers to supply full binary decoding.
Separate output control inputs are provided for each of the two
four-line sections.
Use the three-state outputs to drive data lines in bus-organized
systems. With all but one of the common outputs disabled the
low-impedance of the single enable output will drive the bus
line to a high or low logic level. Each output has its own strobe
(G).
The devices are characterized over full military temperature
range of -55 C to +125 C.
FUNCTION TABLE
SELECT
INPUTS
B
X
L
L
L
L
H
H
H
H
A
X
L
L
H
H
L
L
H
H
C0
X
L
H
X
X
X
X
X
X
DATA INPUTS
C1
X
X
X
L
H
X
X
X
X
C2
X
X
X
X
X
L
H
X
X
C3
X
X
X
X
X
X
X
L
H
OUTPUT
CONTROL
G
H
L
L
L
L
L
L
L
L
OUTPUT
Y
Z
L
H
L
H
L
H
L
H
PINOUTS
16-Pin DIP
Top View
1G
B
1C3
1C2
1C1
1C0
1Y
V
SS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
DD
2G
A
2C3
2C2
2C1
2C0
2Y
16-Lead Flatpack
Top View
1G
B
1C3
1C2
1C1
1C0
1Y
V
SS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
DD
2G
A
2C3
2C2
2C1
2C0
2Y
LOGIC SYMBOL
(14)
(2)
(1)
(6)
(5)
(4)
(3)
EN
0
1
2
3
MUX
(7)
A
B
1G
1C0
1C1
1C2
1C3
0
1
G
---
0
3
1Y
(15)
2G
(10)
2C0
(11)
2C1
(12)
2C2
(13)
2C3
(9)
2Y
Note:
1. Logic symbol in accordance with ANSI/IEEE Std 91-1984 and IEC
Publication 617-12.
177
RadHard MSI Logic
UT54ACS253/UT54ACTS253
LOGIC DIAGRAM
OUTPUT
CONTROL
1G
(1)
1C0 (6)
(5)
(7)
1C1
DATA 1
1C2
1Y
(4)
1C3
(3)
B
SELECT
(2)
A (14)
2C0
(10)
2C1 (11)
DATA 2
2C2
(12)
(9)
2Y
2C3
(13)
2G
OUTPUT
CONTROL
(15)
RadHard MSI Logic
178
UT54ACS253/UT54ACTS253
RADIATION HARDNESS SPECIFICATIONS
1
PARAMETER
Total Dose
SEU Threshold
2
SEL Threshold
Neutron Fluence
LIMIT
1.0E6
80
120
1.0E14
UNITS
rads(Si)
MeV-cm
2
/mg
MeV-cm
2
/mg
n/cm
2
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
DD
V
I/O
T
STG
T
J
T
LS
JC
PARAMETER
Supply voltage
Voltage any pin
Storage Temperature range
Maximum junction temperature
Lead temperature (soldering 5 seconds)
Thermal resistance junction to case
DC input current
Maximum power dissipation
LIMIT
-0.3 to 7.0
-.3 to V
DD
+.3
-65 to +150
+175
+300
20
10
1
UNITS
V
V
C
C
C
C/W
mA
W
I
I
P
D
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
V
IN
T
C
PARAMETER
Supply voltage
Input voltage any pin
Temperature range
LIMIT
4.5 to 5.5
0 to V
DD
-55 to + 125
UNITS
V
V
C
179
RadHard MSI Logic
UT54ACS253/UT54ACTS253
DC ELECTRICAL CHARACTERISTICS
7
(V
DD
= 5.0V 10%; V
SS
= 0V
6
, -55 C < T
C
< +125 C)
SYMBOL
V
IL
PARAMETER
Low-level input voltage
1
ACTS
ACS
High-level input voltage
1
ACTS
ACS
Input leakage current
ACTS/ACS
Low-level output voltage
3
ACTS
ACS
High-level output voltage
3
ACTS
ACS
Short-circuit output current
2 ,4
ACTS/ACS
Three-state output leakage current
Quiescent Supply Current
Output current
10
(Sink)
I
OH
Output current
10
(Source)
P
total
I
DDQ
I
DDQ
Power dissipation
2, 8, 9
Quiescent Supply Current
Quiescent Supply Current Delta
ACTS
V
IN
= V
DD
or V
SS
I
OL
= 8.0mA
I
OL
= 100 A
I
OH
= -8.0mA
I
OH
= -100 A
V
O
= V
DD
and V
SS
V
O
= V
DD
and V
SS
V
DD
= 5.5V
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
V
IN
= V
DD
or V
SS
V
OH
= V
DD
- 0.4V
C
L
= 50pF
V
DD
= 5.5V
For input under test
V
IN
= V
DD
- 2.1V
For all other inputs
V
IN
= V
DD
or V
SS
V
DD
= 5.5V
C
IN
C
OUT
Input capacitance
5
Output capacitance
5
= 1MHz @ 0V
= 1MHz @ 0V
15
15
pF
pF
2.1
10
1.6
mW/
MHz
A
mA
-8
mA
8
.7V
DD
V
DD
- 0.25
-200
-20
200
20
10
.5V
DD
.7V
DD
-1
1
CONDITION
MIN
MAX
0.8
.3V
DD
UNIT
V
V
IH
V
I
IN
V
OL
A
0.40
0.25
V
V
OH
V
I
OS
I
OZ
I
DDQ
I
OL
mA
A
A
mA
RadHard MSI Logic
180
UT54ACS253/UT54ACTS253
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V
IH
= V
IH
(min) + 20%, - 0%; V
IL
= V
IL
(max) + 0%,
- 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but
are guaranteed to V
IH
(min) and V
IL
(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density 5.0E5 amps/cm
2
, the maximum product of load capacitance (per output buffer) times frequency should not exceed
3,765 pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and V
SS
at frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose 1E6 rads(Si).
8. Power does not include power contribution of any TTL output sink current.
9. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
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