IRGS4045DPbF
V
CES
= 600V
I
C
½
6.0A, T
C
= 100°C
t
sc
> 5µs, T
jmax
= 175°C
V
CE(on) typ.
½
1.7V
Applications
Appliance Motor Drive
Inverters
SMPS
Features
Low V
CE(ON)
and switching losses
Square RBSOA and maximum junction temperature 175°C
Positive V
CE(ON)
temperature coefficient and tighter
distribution of parameters
5μs short circuit SOA
Ultra fast soft recovery copak diode
Lead-free, RoHS compliant
G
E
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
C
E
n-channel
G
Gate
D
2
-Pak
IRGS4045DPbF
G
C
Colletor
E
Emitter
Benefits
High efficiency in a wide range of applications and
switching frequencies
Improved reliability due to rugged hard switching performance
and higher power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Performance optimized for motor drive operation
Environmentally friendly
Base part number
IRGS4045DPbF
Package Type
D2Pak
Standard Pack
Form
Tube
Tape and Reel Left
Tape and Reel Right
Orderable Part Number
Quantity
50
800
800
IRGS4045DPbF
IRGS4045DTRLPbF
IRGS4045DTRRPbF
Absolute Maximum Ratings
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@T
C
=25°C
I
F
@T
C
=100°C
I
FM
V
GE
P
D
@ T
C
=25°
P
D
@ T
C
=100°
T
J
T
STG
Thermal Resistance
R
JC
R
JC
R
CS
R
JA
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
600
12
6.0
18
24
8.0
4.0
24
± 20
± 30
77
39
-55 to + 175
300 (0.063 in. (1.6mm) from case)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.5
–––
Max.
1.9
6.3
–––
40
Units
°C/W
Units
V
c
A
d
V
W
°C
e
e
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (PCB Mountet, steady-state)
g
*Qualification
standards can be found at http://www.irf.com/
1
www.irf.com
© 2012 International Rectifier
October 10, 2012
IRGS4045DPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
V
(BR)CES
/T
J
V
CE(on)
V
GE(th)
V
GE(th)
/TJ
gfe
I
CES
V
FM
I
GES
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Min.
600
—
—
—
—
4.0
—
—
—
—
—
—
—
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
0.36
1.7
2.07
2.14
—
-13
5.8
—
—
1.60
1.30
—
Typ.
13
3.1
6.4
56
122
178
27
11
75
17
140
189
329
26
12
95
32
350
29
10
Max.
—
—
2.0
—
—
6.5
—
—
25
250
2.30
—
±100
Max.
Units
V
V/°C
V
Conditions
V
GE
= 0V, I
c
=100
μA
V
GE
= 0V, I
c
= 250μA ( 25 -175
o
C )
I
C
= 6.0A, V
GE
= 15V, T
J
= 25°C
I
C
= 6.0A, V
GE
= 15V, T
J
= 150°C
I
C
= 6.0A, V
GE
= 15V, T
J
= 175°C
V
CE
= V
GE
, I
C
= 150μA
f
f
V
o
mV/°C V
CE
= V
GE
, I
C
= 250μA ( 25 -175 C )
V
CE
= 25V, I
C
= 6.0A, PW =80
s
S
V
GE
= 0V,V
CE
= 600V
μA
V
GE
= 0V, V
CE
= 600V, T
J
=175°C
V
nA
Units
nC
I
C
= 6.0A
V
CC
= 400V
V
GE
= 15V
I
C
= 6.0A, V
CC
= 400V, V
GE
= 15V
R
G
= 47, L=1mH, L
S
= 150nH, T
J
= 25°C
E nergy los s es include tail and diode revers e recovery
I
F
= 6.0A
I
F
= 6.0A, T
J
= 175°C
V
GE
= ± 20 V
Conditions
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
19.5
4.65
9.6
86
143
229
35
15
93
22
—
—
—
—
—
—
—
—
—
—
h
μJ
ns
I
C
= 6.0A, V
CC
= 400V
R
G
= 47, L=1mH, L
S
= 150nH
T
J
= 25°C
I
C
= 6.0A, V
CC
= 400V, V
GE
= 15V
R
G
= 47, L=1mH, L
S
= 150nH, T
J
= 175°C
E nergy los s es include tail and diode revers e recovery
μJ
ns
I
C
= 6.0A, V
CC
= 400V
R
G
= 47, L=1mH, L
S
= 150nH
T
J
= 175°C
V
GE
= 0V
pF
FULL SQUARE
SCSOA
Erec
trr
Irr
Short Circuit Safe Operating Area
Reverse recovery energy of the diode
Diode Reverse recovery time
Peak Reverse Recovery Current
5
—
—
—
—
178
74
12
—
—
—
—
μs
μJ
ns
A
V
CC
= 30V
f = 1Mhz
T
J
= 175°C, I
C
= 24A
V
CC
= 500V, Vp =600V
R
G
= 100, V
GE
= +20V to 0V
V
CC
= 400V, Vp =600V
R
G
= 100, V
GE
= +15V to 0V
T
J
= 175
o
C
V
CC
= 400V, I
F
= 6.0A
V
GE
= 15V, Rg = 47, L=1mH, L
S
=150nH
Notes:
V
CC
= 80% (V
CES
), V
GE
= 15V, L = 1.0mH, R
G
= 47
Pulse width limited by max. junction temperature.
R
is measured at T
J
approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.
Maximum limits are based on statistical sample size characterization.
2
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© 2012 International Rectifier
October 10, 2012
IRGS4045DPbF
14
12
10
80
70
60
50
Ptot (W)
0
20
40
60
80 100 120 140 160 180
T C (°C)
IC (A)
8
6
4
2
0
40
30
20
10
0
0
20
40
60
80 100 120 140 160 180
T C (°C)
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
100
Fig. 2
- Power Dissipation vs. Case
Temperature
100
10μsec
10
100μsec
10
IC (A)
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
DC
IC A)
1
0
100
VCE (V)
1000
10
100
VCE (V)
1000
Fig. 3
- Forward SOA,
T
C
= 25°C, T
J
175°C, V
GE
= 15V
20
20
Fig. 4
- Reverse Bias SOA
T
J
= 175°C, V
GE
= 20V
15
Top
ICE (A)
ICE (A)
10
V
= 10V
GE
Bottom VGE = 8.0V
V
= 18V
GE
V
= 15V
GE
VGE = 12V
15
Top
10
Bottom
V
= 18V
GE
V
= 15V
GE
V
= 12V
GE
V
= 10V
GE
V
= 8.0V
GE
5
5
0
0
2
4
6
8
10
0
0
2
4
6
8
10
VCE (V)
VCE (V)
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80μs
3
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© 2012 International Rectifier
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80μs
October 10, 2012
IRGS4045DPbF
20
Top
V
= 18V
GE
V
= 15V
GE
V
= 12V
GE
V
= 10V
GE
V
= 8.0V
GE
20
18
16
14
12
IF (A)
15
Bottom
-40°C
25°C
175°C
ICE (A)
10
10
8
5
6
4
2
0
0
2
4
6
8
10
0
0.0
1.0
VF (V)
2.0
3.0
VCE (V)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80μs
10
Fig. 8
- Typ. Diode Forward Characteristics
tp = 80μs
10
8
8
VCE (V)
ICE = 6.0A
4
ICE = 12A
VCE (V)
6
ICE = 3.0A
6
ICE = 3.0A
4
ICE = 6.0A
ICE = 12A
2
2
0
5
10
VGE (V)
15
20
0
5
10
VGE (V)
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
10
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
20
IC, Collector-to-Emitter Current (A)
18
16
14
12
10
8
6
4
2
0
4
8
ICE = 3.0A
ICE = 6.0A
ICE = 12A
4
T J = 25°C
T J = 175°C
VCE (V)
6
2
0
5
10
VGE (V)
15
20
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 175°C
4
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© 2012 International Rectifier
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10μs
October 10, 2012
IRGS4045DPbF
400
350
Swiching Time (ns)
1000
300
tdOFF
100
tF
10
tdON
tR
Energy (μJ)
250
200
150
100
50
0
2
4
6
8
10
12
14
EON
EOFF
1
2
4
6
8
IC (A)
10
12
14
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 1mH; V
CE
= 400V, R
G
= 47; V
GE
= 15V.
220
200
180
EOFF
IC (A)
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 175°C; L=1mH; V
CE
= 400V
R
G
= 47; V
GE
= 15V
1000
Swiching Time (ns)
Energy (μJ)
160
140
120
100
80
60
0
25
50
75
100
125
EON
100
tdOFF
tF
tdON
tR
10
1
0
25
50
75
100
125
RG ()
Rg ()
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 1mH; V
CE
= 400V, I
CE
= 6.0A; V
GE
= 15V
30
25
RG = 10
20
22
20
18
16
Fig. 16-
Typ. Switching Time vs. R
G
T
J
= 175°C; L=1mH; V
CE
= 400V
I
CE
= 6.0A; V
GE
= 15V
IRR (A)
IRR (A)
15
10
5
0
2
4
6
8
IF (A)
RG = 22
RG = 47
RG = 100
14
12
10
8
6
10
12
14
0
25
50
75
100
125
RG (
Fig. 17
- Typical Diode I
RR
vs. I
F
T
J
= 175°C
5
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© 2012 International Rectifier
Fig. 18
- Typical Diode I
RR
vs. R
G
T
J
= 175°C; I
F
= 6.0A
October 10, 2012
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