NP88N075KUE-AZ datasheet, PDF - EEWORLD Datasheet

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NP88N075KUE-AZ: DescriptionPower Field-Effect Transistor, 88A I(D), 75V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZK, TO-263, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size76KB，8 Pages; ManufacturerNEC Electronics

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NP88N075KUE-AZ Overview

Power Field-Effect Transistor, 88A I(D), 75V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZK, TO-263, 3 PIN

NP88N075KUE-AZ Parametric

Parameter Name	Attribute value
Maker	NEC Electronics
Parts packaging code	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	450 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	75 V
Maximum drain current (ID)	88 A
Maximum drain-source on-resistance	0.0085 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	352 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

NP88N075CUE,NP88N075DUE,NP88N075EUE,NP88N075KUE

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

These products are N-channel MOS Field Effect

Transistor designed for high current switching

applications.

ORDERING INFORMATION

PART NUMBER

NP88N075CUE

NP88N075DUE

NP88N075EUE

PACKAGE

TO-220AB

TO-262

TO-263 (MP-25ZJ)

TO-263 (MP-25ZK)

FEATURES

•

Channel temperature 175 degree rated

•

Super low on-state resistance

DS(on)

= 8.5 mΩ MAX. (V

= 10 V, I

= 44 A)

•

Low C

iss

: C

iss

= 8200 pF TYP.

NP88N075KUE

(TO-220AB)

ABSOLUTE MAXIMUM RATINGS (T

= 25°C)

Drain to Source Voltage (V

= 0 V)

Gate to Source Voltage (V

= 0 V)

Drain Current (DC)

Note1

Note2

DSS

GSS

D(DC)

D(pulse)

stg

±20

±88

±352

288

1.8

175

–55 to +175

69 / 88

450 / 14

°C

(TO-263)

(TO-262)

Drain Current (Pulse)

Total Power Dissipation (T

= 25°C)

Total Power Dissipation (T

= 25°C)

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

Note3

Notes 1.

Calculated constant current according to MAX. allowable channel

temperature.

≤

s, Duty cycle

≤

Starting T

= 25°C, V

= 35 V, R

= 25

Ω

, V

= 20

→

0 V

THERMAL RESISTANCE

Channel to Case Thermal Resistance

Channel to Ambient Thermal Resistance

th(ch-C)

th(ch-A)

0.52

83.3

°C/W

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D14676EJ5V0DS00 (5th edition)

Date Published December 2001 NS CP(K)

Printed in Japan

The mark

shows major revised points.

1999, 2000

NP88N075KUE-AZ Related Products

	NP88N075KUE-AZ	NP88N075CUE-AZ	NP88N075DUE-AZ
Description	Power Field-Effect Transistor, 88A I(D), 75V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZK, TO-263, 3 PIN	Power Field-Effect Transistor, 88A I(D), 75V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-25, 3 PIN	Power Field-Effect Transistor, 88A I(D), 75V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, MP-25 FIN CUT, 3 PIN
Maker	NEC Electronics	NEC Electronics	NEC Electronics
Parts packaging code	D2PAK	TO-220AB	TO-262AA
package instruction	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	IN-LINE, R-PSIP-T3
Contacts	4	3	3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	450 mJ	450 mJ	450 mJ
Shell connection	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	75 V	75 V	75 V
Maximum drain current (ID)	88 A	88 A	88 A
Maximum drain-source on-resistance	0.0085 Ω	0.0085 Ω	0.0085 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB	TO-220AB	TO-262AA
JESD-30 code	R-PSSO-G2	R-PSFM-T3	R-PSIP-T3
Number of components	1	1	1
Number of terminals	2	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	FLANGE MOUNT	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	352 A	352 A	352 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	NO
Terminal form	GULL WING	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON

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