IXSR40N60CD1 datasheet, PDF - EEWORLD Datasheet

IXSR40N60CD1: DescriptionInsulated Gate Bipolar Transistor, 62A I(C), 600V V(BR)CES, N-Channel, TO-247AD, ISOPLUS247, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size40KB，2 Pages; ManufacturerIXYS; Environmental Compliance

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Insulated Gate Bipolar Transistor, 62A I(C), 600V V(BR)CES, N-Channel, TO-247AD, ISOPLUS247, 3 PIN

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	IXYS
Parts packaging code	TO-247AD
package instruction	ISOPLUS247, 3 PIN
Contacts	3
Manufacturer packaging code	ISOPLUS
Reach Compliance Code	compliant
Other features	UL RECOGNIZED
Shell connection	ISOLATED
Maximum collector current (IC)	62 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum	7 V
Gate-emitter maximum voltage	20 V
JEDEC-95 code	TO-247AD
JESD-30 code	R-PSFM-T3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	210 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	280 ns
Nominal on time (ton)	100 ns

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