IXTH30N50S datasheet, PDF - EEWORLD Datasheet

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IXTH30N50S: DescriptionPower Field-Effect Transistor, 30A I(D), 500V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size37KB，2 Pages; ManufacturerIXYS; Environmental Compliance

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IXTH30N50S Overview

Power Field-Effect Transistor, 30A I(D), 500V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD, 4 PIN

IXTH30N50S Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	IXYS
package instruction	FLANGE MOUNT, R-PSFM-G2
Contacts	4
Reach Compliance Code	compliant
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (ID)	30 A
Maximum drain-source on-resistance	0.17 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	120 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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Preliminary Data Sheet

MegaMOS

TM

FET

N-Channel Enhancement Mode

V

DSS

IXTH 30N45

IXTH 30N50

450 V

500 V

I

D25

30 A

R

DS(on)

0.16

Ω

0.17

Ω

TO-247 AD

Symbol

Test Conditions

30N45

30N50

30N45

30N50

Maximum Ratings

D (TAB)

V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

DM

P

D

T

J

T

JM

T

stg

T

L

M

d

Weight

T

J

= 25°C to 150°C

T

J

= 25°C to 150°C; R

GS

= 1 MΩ

Continuous

Transient

T

C

= 25°C

T

C

= 25°C, pulse width limited by T

JM

T

C

= 25°C

450

500

450

500

±20

±30

30

120

360

-55 ... +150

150

-55 ... +150

V

A

W

°C

TO-247 SMD

( ...S )

G

E

C (TAB)

G = Gate,

S = Source,

D = Drain,

TAB = Drain

*Add suffix letter "S" for TO-247 SMD

package option (EX:IXTH30N50S)

1.6 mm (0.063 in) from case for 10 s

Mounting torque

300

1.13/10 Nm/lb.in.

6

g

Features

•

International standard package

•

JEDEC TO-247 AD

Low R

DS (on)

HDMOS

TM

process

Rugged polysilicon gate cell structure

High commutating dv/dt rating

Fast switching times

Symbol

Test Conditions

Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

500

450

.087

2

-0.25

±100

T

J

= 25°C

T

J

= 125°C

200

3

0.17

0.16

4

V

%/k

V

%/k

nA

µA

mA

Ω

Applications

V

DSS

V

GS

= 0 V, I

D

= 5 mA

BV

DSS

30N50

30N45

temperature coefficient

•

Switch-mode and resonant-mode

•

power supplies

Motor control

Uninterruptible Power Supplies (UPS)

DC choppers

V

GS(th)

I

GSS

I

DSS

R

DS(on)

V

DS

= V

GS

, I

D

= 250µA

V

GS(th)

temperature coefficient

V

GS

=

±20

V

DC

, V

DS

= 0

V

DS

= 0.8 • V

DSS

V

GS

= 0 V

V

GS

= 10 V, I

D

= 0.5 I

D25

Advantages

30N50

30N45

Pulse test, t

≤

300

µs,

duty cycle d

≤

2 %

•

Easy to mount with 1 screw (TO-247)

•

(isolated mounting screw hole)

Space savings

High power density

94569D(5/97)

IXTH30N50S Related Products

	IXTH30N50S	IXTH30N45S
Description	Power Field-Effect Transistor, 30A I(D), 500V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD, 4 PIN	Power Field-Effect Transistor, 30A I(D), 450V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD, 4 PIN
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	IXYS	IXYS
package instruction	FLANGE MOUNT, R-PSFM-G2	SMD, 4 PIN
Contacts	4	4
Reach Compliance Code	compliant	compliant
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V	450 V
Maximum drain current (ID)	30 A	30 A
Maximum drain-source on-resistance	0.17 Ω	0.16 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-G2	R-PSFM-G2
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	120 A	120 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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