EEWORLDEEWORLDEEWORLD

Part Number

Search

ISL9R460S3STL99Z

Description
Rectifier Diode, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, TO-263AB,
CategoryDiscrete semiconductor    diode   
File Size82KB,6 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

ISL9R460S3STL99Z Overview

Rectifier Diode, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, TO-263AB,

ISL9R460S3STL99Z Parametric

Parameter NameAttribute value
MakerFairchild
package instructionR-PSSO-G2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresFREEWHEELING DIODE, SNUBBER DIODE
applicationFAST SOFT RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current4 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.022 µs
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
ISL9R460P2, ISL9R460S2, ISL9R460S3S
January 2002
ISL9R460P2, ISL9R460S2, ISL9R460S3S
4A, 600V Stealth™ Diode
General Description
The ISL9R460P2, ISL9R460S2 and ISL9R460S3S are
Stealth™ diodes optimized for low loss performance in
high frequency hard switched applications. The
Stealth™ family exhibits low reverse recovery current
(I
RRM
) and exceptionally soft recovery under typical
operating conditions.
This device is intended for use as a free wheeling or
boost diode in power supplies and other power
switching applications. The low I
RRM
and short t
a
phase
reduce loss in switching transistors. The soft recovery
minimizes ringing, expanding the range of conditions
under which the diode may be operated without the use
of additional snubber circuitry. Consider using the
Stealth™ diode with an SMPS IGBT to provide the
most efficient and highest power density design at
lower cost.
Formerly developmental type TA49408.
Features
• Soft Recovery. . . . . . . . . . . . . . . . . . . . . t
b
/ t
a
> 3
• Fast Recovery . . . . . . . . . . . . . . . . . . . . t
rr
< 20ns
• Operating Temperature . . . . . . . . . . . . . . . 175
o
C
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Package
JEDEC TO-220AC
ANODE
CATHODE
Symbol
JEDEC STYLE TO-262
ANODE
CATHODE
JEDEC TO-263AB
K
CATHODE
(FLANGE)
CATHODE
(FLANGE)
CATHODE
(FLANGE)
N/C
ANODE
A
Device Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
P
D
E
AVL
T
J
, T
STG
T
L
T
PKG
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 20mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
Ratings
600
600
600
4
8
50
58
10
-55 to 175
300
260
Units
V
V
V
A
A
A
W
mJ
˚C
˚C
˚C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Fairchild Semiconductor Corporation
ISL9R460P2, ISL9R460S2, ISL9R460S3S Rev. B

ISL9R460S3STL99Z Related Products

ISL9R460S3STL99Z ISL9R460S3STS62Z ISL9R460S3STL86Z ISL9R460S3SL86Z ISL9R460S3SL99Z ISL9R460S3SS62Z
Description Rectifier Diode, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, TO-263AB, Rectifier Diode, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, TO-263AB, Rectifier Diode, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, TO-263AB, Rectifier Diode, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, TO-263AB, Rectifier Diode, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, TO-263AB, Rectifier Diode, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, TO-263AB,
Maker Fairchild Fairchild Fairchild Fairchild Fairchild Fairchild
package instruction R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
Reach Compliance Code unknown unknown unknown unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features FREEWHEELING DIODE, SNUBBER DIODE FREEWHEELING DIODE, SNUBBER DIODE FREEWHEELING DIODE, SNUBBER DIODE FREEWHEELING DIODE, SNUBBER DIODE FREEWHEELING DIODE, SNUBBER DIODE FREEWHEELING DIODE, SNUBBER DIODE
application FAST SOFT RECOVERY FAST SOFT RECOVERY FAST SOFT RECOVERY FAST SOFT RECOVERY FAST SOFT RECOVERY FAST SOFT RECOVERY
Shell connection CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code TO-263AB TO-263AB TO-263AB TO-263AB TO-263AB TO-263AB
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
Maximum non-repetitive peak forward current 50 A 50 A 50 A 50 A 50 A 50 A
Number of components 1 1 1 1 1 1
Phase 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Maximum output current 4 A 4 A 4 A 4 A 4 A 4 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 600 V 600 V 600 V 600 V 600 V 600 V
Maximum reverse recovery time 0.022 µs 0.022 µs 0.022 µs 0.022 µs 0.022 µs 0.022 µs
surface mount YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Duty cycle setting problem
In 28335, EPwm2Regs.CMPA.half.CMPA = 0.5*Tcon; this kind of statement, the actual waveform, the duty cycle is not 0.5, and it is also related to the phase TBPHS (theoretically, there should be no rela...
lzx_18570633112 DSP and ARM Processors
Share how to use GPIO to simulate I2C communication on C2000
As a simple digital communication method, I2C only needs two data lines to complete the communication between the host (Master) and the slave (Slave) at a short distance, saving MCU pins and additiona...
Jacktang Microcontroller MCU
Detailed explanation of Zigbee networking principle
1. Network Overview   Building a complete Zigbee mesh network includes two steps: network initialization and node joining the network. Node joining the network includes two steps: joining the network ...
Jacktang Wireless Connectivity
How to write pointer array in stm32
as follows: code u8 STB1[][3]={}; code u8 STB2[][3]={};code u8 code *std[]={STB1,STB2}; This worked in 51 before, but there was a problem when ported to 32 (code has been changed to const). Error mess...
ena stm32/stm8
[Evaluation of domestic FPGA Gaoyun GW1N-4 series development board]——12. Two tips (multi-function pins and board silk screen)
[i=s]This post was last edited by gs001588 on 2022-1-22 22:43[/i][Evaluation of domestic FPGA Gaoyun GW1N-4 series development board]——12. Two tips (multi-function pins and board silk screen)Tips (1):...
gs001588 Domestic Chip Exchange
What are the units of divergence and curl used in electromagnetic fields?
What are the units of divergence and curl used in electromagnetic fields?...
深圳小花 MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号