RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92
Parameter Name | Attribute value |
package instruction | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Maximum collector current (IC) | 0.02 A |
Collector-based maximum capacity | 2 pF |
Collector-emitter maximum voltage | 12 V |
Configuration | SINGLE |
highest frequency band | VERY HIGH FREQUENCY BAND |
JEDEC-95 code | TO-92 |
JESD-30 code | O-PBCY-T3 |
Number of components | 1 |
Number of terminals | 3 |
Package body material | PLASTIC/EPOXY |
Package shape | ROUND |
Package form | CYLINDRICAL |
Polarity/channel type | NPN |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | BOTTOM |
transistor applications | AMPLIFIER |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 470 MHz |
Base Number Matches | 1 |
2SC763-11-C | 2SC763-11-B | 2SC763-T11-C | 2SC763-11-D | 2SC763-T11-B | 2SC763-T11-D | |
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Description | RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92 | RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92 | RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92 | RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92 | RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92 | RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92 |
package instruction | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Maximum collector current (IC) | 0.02 A | 0.02 A | 0.02 A | 0.02 A | 0.02 A | 0.02 A |
Collector-based maximum capacity | 2 pF | 2 pF | 2 pF | 2 pF | 2 pF | 2 pF |
Collector-emitter maximum voltage | 12 V | 12 V | 12 V | 12 V | 12 V | 12 V |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
highest frequency band | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND |
JEDEC-95 code | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 |
JESD-30 code | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | NO | NO | NO | NO | NO |
Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Nominal transition frequency (fT) | 470 MHz | 470 MHz | 470 MHz | 470 MHz | 470 MHz | 470 MHz |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |