2N7624U3 datasheet, PDF - EEWORLD Datasheet

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2N7624U3: DescriptionPower Field-Effect Transistor, 22A I(D), 60V, 0.072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size217KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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2N7624U3 Overview

Power Field-Effect Transistor, 22A I(D), 60V, 0.072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

2N7624U3 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	CHIP CARRIER, R-CBCC-N3
Reach Compliance Code	compli
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	79 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	22 A
Maximum drain current (ID)	22 A
Maximum drain-source on-resistance	0.072 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CBCC-N3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	57 W
Maximum pulsed drain current (IDM)	88 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	NO LEAD
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

2N7624U3 Related Products

	2N7624U3	IRHLNJ797034	IRHLNJ793034	IRHLNJ793034SCS
Description	Power Field-Effect Transistor, 22A I(D), 60V, 0.072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN	Power Field-Effect Transistor, 22A I(D), 60V, 0.072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN	Power Field-Effect Transistor, 22A I(D), 60V, 0.072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN	Power Field-Effect Transistor, 22A I(D), 60V, 0.072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
package instruction	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3	HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN	CHIP CARRIER, R-CBCC-N3
Reach Compliance Code	compli	compliant	compliant	compliant
Avalanche Energy Efficiency Rating (Eas)	79 mJ	79 mJ	79 mJ	79 mJ
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	60 V	60 V	60 V
Maximum drain current (ID)	22 A	22 A	22 A	22 A
Maximum drain-source on-resistance	0.072 Ω	0.072 Ω	0.072 Ω	0.072 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CBCC-N3	R-CBCC-N3	R-CBCC-N3	R-CBCC-N3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum pulsed drain current (IDM)	88 A	88 A	88 A	88 A
surface mount	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Is it Rohs certified?	incompatible	incompatible	incompatible	-
ECCN code	EAR99	EAR99	EAR99	-
Other features	LOGIC LEVEL COMPATIBLE	-	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE
Maximum drain current (Abs) (ID)	22 A	22 A	22 A	-
JESD-609 code	e0	e0	e0	-
Maximum operating temperature	150 °C	150 °C	150 °C	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Maximum power dissipation(Abs)	57 W	57 W	57 W	-
Certification status	Not Qualified	Not Qualified	Not Qualified	-
Terminal surface	TIN LEAD	Tin/Lead (Sn/Pb)	TIN LEAD	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Maker	-	Infineon	Infineon	Infineon

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