FYPF2010DN
FYPF2010DN
Features
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
Applications
• Switched mode power supply
• Freewheeling diodes
• Polarity protection
1 2
3
TO-220F
1. Anode 2.Cathode 3. Anode
20A SCHOTTKY BARRIER RECTIFIER
Absolute Maximum Ratings
(per diode) T
C
=25°C unless otherwise noted
°
Symbol
V
RRM
V
R
I
F(AV)
I
FSM
T
J,
T
STG
Parameter
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
Maximum Average Rectified Current
Maximum Forward Surge Current (per diode)
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature
@ T
C
= 105°C
Value
100
100
20
150
-65 to +150
Units
V
V
A
A
°C
Thermal Characteristics
Symbol
R
θJC
Parameter
Maximum Thermal Resistance, Junction to Case (per diode)
Value
2.8
Units
°C/W
Electrical Characteristics
(per diode) T
C
=25
°
C unless otherwise noted
Symbol
V
FM
*
Parameter
Maximum Instantaneous Forward Voltage
I
F
= 10A
I
F
= 10A
I
F
= 20A
I
F
= 20A
Maximum Instantaneous Reverse Current
(per diode)
@ rated V
R
Min.
T
C
= 25
°C
T
C
= 125
°C
T
C
= 25
°C
T
C
= 125
°C
T
C
= 25
°C
T
C
= 125
°C
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
Max.
0.77
0.65
-
0.75
mA
0.1
20
Units
V
I
RM
*
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
©2002 Fairchild Semiconductor Corporation
Rev. A, September 2002
FYPF2010DN
Typical Characteristics
100
10
Forward Current, I
F
[A]
10
Reverse Current, I
R
[mA]
1
T
J
=125 C
o
1
0.1
T
J
=75 C
o
T
J
=125 C
0.1
o
T
J
=75 C
T
J
=25 C
o
o
0.01
T
J
=25 C
o
0.01
0.0
1E-3
0.5
1.0
1.5
20
40
60
80
100
Forward Voltage Drop, V
F
[V]
Reverse Voltage, V
R
[V]
Figure 1. Typical Forward Voltage Characteristics
(per diode)
Figure 2. Typical Reverse Current
vs. Reverse Voltage (per diode)
10
1000
900
800
700
600
500
400
300
200
T
J
=25 C
o
Transient Thermal Impedance [ C/W]
Juntion Capacitance, C
J
[pF]
o
1
100
90
80
0
20
40
60
80
100
0.1
100µ
1m
10m
100m
1
10
100
Reverse Voltage, V
R
[V]
Pulse Duration [s]
Figure 3. Typical Junction Capacitance
(per diode)
Figure 4. Thermal Impedance Characteristics
(per diode)
25
250
DC
20
Max. Forward Surge Current, I
FSM
[A]
80
100
o
Average Forward Current, I
F(AV)
[A]
200
15
150
10
100
5
50
0
0
20
40
60
120
140
160
0
1
10
100
Case Temperature, T
C
[ C]
Number of Cycles @ 60Hz
Figure 5. Forward Current Derating Curve
Figure 6. Non-Repetive Surge Current
(per diode)
©2002 Fairchild Semiconductor Corporation
Rev. A, September 2002
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which, (a) are intended for surgical implant into the body,
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
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