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2N3905TRETIN/LEAD

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size314KB,2 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric Compare View All

2N3905TRETIN/LEAD Overview

Transistor

2N3905TRETIN/LEAD Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknow
Maximum collector current (IC)0.2 A
ConfigurationSingle
Minimum DC current gain (hFE)50
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.625 W
surface mountNO
Nominal transition frequency (fT)200 MHz
Base Number Matches1
2N3905
2N3906
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3905 and
2N3906 types are PNP silicon transistors designed for
general purpose amplifier and switching applications.
NPN complementary types are 2N3903 and 2N3904.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
hfe
fT
Cob
Cib
NF
ton
toff
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
2N3905
MIN
MAX
-
50
40
-
40
-
5.0
-
-
0.25
-
0.4
0.65
0.85
-
0.95
30
-
40
-
50
150
30
-
15
-
50
200
200
-
-
4.5
-
10
-
-
-
5.0
70
260
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
V
V
V
V
V
V
V
40
40
5.0
200
625
-65 to +150
200
2N3906
MIN
MAX
-
50
40
-
40
-
5.0
-
-
0.25
-
0.4
0.65
0.85
-
0.95
60
-
80
-
100
300
60
-
30
-
100
400
250
-
-
4.5
-
10
-
-
-
4.0
70
300
CHARACTERISTICS:
(TA=25°C)
TEST CONDITIONS
VCE=30V, VEB=3.0V
IC=10μA
IC=1.0mA
IE=10μA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=1.0V, IC=0.1mA
VCE=1.0V, IC=1.0mA
VCE=1.0V, IC=10mA
VCE=1.0V, IC=50mA
VCE=1.0V, IC=100mA
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=20V, IC=10mA, f=100MHz
VCB=5.0V, IE=0, f=100kHz
VEB=0.5V, IC=0, f=100kHz
VCE=5.0V, IC=100μA, RS=1.0kΩ
f=10Hz to 15.7kHz
VCC=3.0V, VBE(OFF)=0.5V, IC=10mA
IB1=1.0mA
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
MHz
pF
pF
dB
ns
ns
R2 (17-October 2011)

2N3905TRETIN/LEAD Related Products

2N3905TRETIN/LEAD 2N3906TRETIN/LEAD 2N3905LEADFREE 2N3906LEADFREE 2N3905TIN/LEAD
Description Transistor Transistor Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.2A I(C), PNP,
Is it Rohs certified? incompatible incompatible conform to conform to incompatible
Reach Compliance Code unknow unknow _compli _compli unknown
Maximum collector current (IC) 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A
Configuration Single Single SINGLE SINGLE Single
Minimum DC current gain (hFE) 50 100 15 30 50
Polarity/channel type PNP PNP PNP PNP PNP
surface mount NO NO NO NO NO
Nominal transition frequency (fT) 200 MHz 250 MHz 200 MHz 250 MHz 200 MHz
Base Number Matches 1 1 1 1 1
Maximum operating temperature 150 °C 150 °C - 150 °C 150 °C
Maximum power dissipation(Abs) 0.625 W 0.625 W - 0.625 W 0.625 W
JESD-609 code - - e3 e3 e0
Peak Reflow Temperature (Celsius) - - 260 260 NOT SPECIFIED
Terminal surface - - MATTE TIN (315) Matte Tin (Sn) Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature - - 10 10 NOT SPECIFIED
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