Preliminary
Datasheet
LPM9435
LPM9435
P-Channel Enhancement Mode Field Effect Transistor
General Description
The LPM9435 is the P-channel logic enhancement
mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application, notebook computer power management
and other battery powered circuits where high=-side
switching.
■
Features
■
■
■
-30V/-5.8A,R
DC(ON)
=38mΩ(typ.)@V
GS
=-10V
-30V/-4.0A,R
DC(ON)
=60mΩ(typ.)@V
GS
=-4.5V
Super high density cell design for extremely
low R
DC(ON)
SOP8 Package
Applications
Portable Media Players
Cellular and Smart mobile phone
LCD
DSC Sensor
Wireless Card
Ordering Information
LPM9435-
□ □
□
F: Pb-Free
Package Type
SO: SOP-8
Marking Information
Please see website.
Pin Configurations
SOP8(Top View)
LPM9435 – 00
Version 1.0 Datasheet
Dec.-2009
www.lowpowersemi.com
Page 1 of 6
京公网安备 11010802033920号
EEWORLD
