Preliminary Datasheet
LPM9017
LPM9017 -
-30V/4A
P-Channel Enhancement Mode Field Effect Transistor
General Description
The LPM9017 is the P-channel logic enhancement
mode power field effect transistors are produced using
high cell density, DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application, notebook computer power management
and other battery powered circuits where high-side
switching.
■
Features
■ -30V/-4A,R
DS(ON)
＜58mΩ(typ.)@V
GS
=-10V
■ -30V/-3.0A,R
DS(ON)
＜68mΩ(typ.)@V
GS
=-4.5V
■
Super high density cell design for extremely
low R
DS(ON)
SOT23 Package
Applications
Portable Media Players
Cellular and Smart mobile phone
LCD
DSC Sensor
Wireless Card
Ordering Information
LPM9017-
□ □
□
F: Pb-Free
Package Type
B3: SOT23
Marking Information
Please see website.
Pin Configurations
SOT23L(Top View)
LPM9017 – 00 Version 1.0 Datasheet
Dec.-2008
www.lowpowersemi.com
Page 1 of 7
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