Preliminary Datasheet
LPM3401
LPM3401
-
-20V/4.2A
P-Channel Enhancement Mode Field Effect Transistor
General Description
The LPM3401 is the P-channel logic enhancement
mode power field effect transistors are produced using
high cell density, DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application, notebook computer power management
and other battery powered circuits where high-side
switching.
Features
■
■
■
■
-20V/-4.2A,R
DC(ON)
≤
54mΩ(typ.)@V
GS
=-2.5V
-20V/-3.0A,R
DC(ON)
≤
60mΩ(typ.)@V
GS
=-4.5V
Super high density cell design for extremely
low R
DC(ON)
SOT23 Package
Applications
Portable Media Players
Cellular and Smart mobile phone
LCD
DSC Sensor
Wireless Card
Ordering Information
LPM3401
□ □
□
F: Pb-Free
Package Type
B3: SOT23
Marking Information
Device
LPM3401B3F
XXX :
Marking
A1XXX
Package
SOT23-3
Shipping
3K/REEL
The production cycle and the batch.
Pin Configurations
SOT23L(Top View)
LPM3401 – 00
Version 1.0 Datasheet
Dec.-2011
www.lowpowersemi.com
Page 1 of 6
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