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NAND01GW3A2CZD6E

Description
Flash, 128MX8, 12000ns, PBGA55, 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-55
Categorystorage    storage   
File Size1MB,53 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Environmental Compliance  
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NAND01GW3A2CZD6E Overview

Flash, 128MX8, 12000ns, PBGA55, 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-55

NAND01GW3A2CZD6E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instructionTFBGA, BGA55,8X12,32
Contacts55
Reach Compliance Codeunknown
ECCN code3A991.B.1.A
Maximum access time12000 ns
Other featuresORGANIZED AS 264 PAGES OF 528 BYTES
command user interfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B55
length10 mm
memory density1073741824 bit
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size8K
Number of terminals55
word count134217728 words
character code128000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128MX8
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA55,8X12,32
Package shapeRECTANGULAR
Package formGRID ARRAY
page size512 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.05 mm
Department size16K
Maximum standby current0.00005 A
Maximum slew rate0.03 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeSLC NAND TYPE
width8 mm
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