T7S0026504DN datasheet, PDF - EEWORLD Datasheet

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T7S0026504DN: DescriptionSilicon Controlled Rectifier, 1125A I(T)RMS, 650000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, HERMETIC PACKAGE-3; CategoryAnalog mixed-signal IC Trigger device; File Size641KB，4 Pages; ManufacturerPOWEREX; Websitehttp://www.pwrx.com/Home.aspx; Environmental Compliance

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T7S0026504DN Overview

Silicon Controlled Rectifier, 1125A I(T)RMS, 650000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, HERMETIC PACKAGE-3

T7S0026504DN Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	POWEREX
package instruction	DISK BUTTON, O-CXDB-X3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Nominal circuit commutation break time	150 µs
Configuration	SINGLE
Critical rise rate of minimum off-state voltage	300 V/us
Maximum DC gate trigger current	150 mA
Maximum DC gate trigger voltage	3 V
JESD-30 code	O-CXDB-X3
Maximum leakage current	30 mA
On-state non-repetitive peak current	9000 A
Number of components	1
Number of terminals	3
Maximum on-state current	650000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	1125 A
Off-state repetitive peak voltage	200 V
Repeated peak reverse voltage	200 V
surface mount	YES
Terminal form	UNSPECIFIED
Terminal location	UNSPECIFIED
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR

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Description	Silicon Controlled Rectifier, 1125A I(T)RMS, 650000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, HERMETIC PACKAGE-3	Silicon Controlled Rectifier, 1125A I(T)RMS, 650000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, HERMETIC PACKAGE-3	Silicon Controlled Rectifier, 1125A I(T)RMS, 650000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, HERMETIC PACKAGE-3	Silicon Controlled Rectifier, 1125A I(T)RMS, 650000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, HERMETIC PACKAGE-3	Silicon Controlled Rectifier, 1125A I(T)RMS, 650000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, HERMETIC PACKAGE-3	Silicon Controlled Rectifier, 1125A I(T)RMS, 650000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, HERMETIC PACKAGE-3
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
package instruction	DISK BUTTON, O-CXDB-X3	DISK BUTTON, O-CXDB-X3	DISK BUTTON, O-CXDB-X3	DISK BUTTON, O-CXDB-X3	DISK BUTTON, O-CXDB-X3	DISK BUTTON, O-CXDB-X3
Contacts	3	3	3	3	3	3
Reach Compliance Code	unknown	unknow	unknown	unknown	unknown	unknow
Nominal circuit commutation break time	150 µs	150 µs	150 µs	150 µs	150 µs	150 µs
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Critical rise rate of minimum off-state voltage	300 V/us	300 V/us	300 V/us	300 V/us	300 V/us	300 V/us
Maximum DC gate trigger current	150 mA	150 mA	150 mA	150 mA	150 mA	150 mA
Maximum DC gate trigger voltage	3 V	3 V	3 V	3 V	3 V	3 V
JESD-30 code	O-CXDB-X3	O-CXDB-X3	O-CXDB-X3	O-CXDB-X3	O-CXDB-X3	O-CXDB-X3
Maximum leakage current	30 mA	30 mA	30 mA	30 mA	30 mA	30 mA
On-state non-repetitive peak current	9000 A	9000 A	9000 A	9000 A	9000 A	9000 A
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Maximum on-state current	650000 A	650000 A	650000 A	650000 A	650000 A	650000 A
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum rms on-state current	1125 A	1125 A	1125 A	1125 A	1125 A	1125 A
Off-state repetitive peak voltage	200 V	1200 V	1000 V	800 V	400 V	1400 V
Repeated peak reverse voltage	200 V	1200 V	1000 V	800 V	400 V	1400 V
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Terminal location	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Trigger device type	SCR	SCR	SCR	SCR	SCR	SCR
Maker	POWEREX	-	POWEREX	POWEREX	POWEREX	POWEREX

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