AUTOMOTIVE GRADE
PD -
96395A
AUIRFS3107-7P
Features
l
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Enhanced dV/dT and dI/dT capability
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
HEXFET
®
Power MOSFET
D
G
S
V
DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
D
75V
2.1m
Ω
2.6mΩ
260A
240A
c
Description
Specifically designed for Automotive applications, this
HEXFET
®
Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use
in Automotive applications and a wide variety of other
applications.
G
S
G
S
S
S
S
D
2
Pak 7 Pin
AUIRFS3107-7P
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient
temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
d
d
e
f
d
260
190
240
1060
370
2.5
± 20
320
See Fig. 14, 15, 22a, 22b
13
-55 to + 175
300
c
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
kl
Parameter
Typ.
Max.
0.40
40
Units
°C/W
j
–––
–––
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
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1
11/1/11
AUIRFS3107-7P
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
R
DS(on)
V
GS(th)
gfs
R
G
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Internal Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
75
–––
–––
2.0
260
–––
Conditions
–––
0.083
2.1
–––
–––
2.1
–––
–––
–––
–––
–––
–––
2.6
4.0
–––
–––
20
250
100
-100
V V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 5mA
mΩ V
GS
= 10V, I
D
= 160A
V V
DS
= V
GS
, I
D
= 250μA
S V
DS
= 25V, I
D
= 160A
g
d
Ω
–––
–––
–––
–––
μA
nA
V
DS
= 75V, V
GS
= 0V
V
DS
= 75V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
160
38
57
103
17
80
100
64
9200
850
400
1150
1500
240
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Conditions
I
D
= 160A
V
DS
= 38V
V
GS
= 10V
I
D
= 160A, V
DS
=0V, V
GS
= 10V
V
DD
= 49V
I
D
= 160A
R
G
= 2.7Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 60V
V
GS
= 0V, V
DS
= 0V to 60V
g
ns
g
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
h
iÃ
pF
i
h
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Min. Typ. Max. Units
–––
–––
––– 260
–––
Conditions
MOSFET symbol
D
Ãd
1060
A
showing the
integral reverse
G
S
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
––– –––
1.3
V
–––
52
–––
ns
–––
63
–––
––– 110 –––
nC
T
J
= 125°C
––– 160 –––
–––
3.8
–––
A T
J
= 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
p-n junction diode.
T
J
= 25°C, I
S
= 160A, V
GS
= 0V
T
J
= 25°C
V
R
= 64V,
T
J
= 125°C
I
F
= 160A
di/dt = 100A/μs
T
J
= 25°C
g
g
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 240A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.026mH
R
G
= 25Ω, I
AS
= 160A, V
GS
=10V. Part not recommended for use
above this value .
I
SD
≤
160A, di/dt
≤
1420A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400μs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering echniques refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C.
R
θJC
value shown is at time zero.
2
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AUIRFS3107-7P
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments:
This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level is
granted by extension of the higher Automotive level.
7L-D PAK
2
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device Model
RoHS Compliant
†
††
†††
MSL1
Class M4(+/- 800V )
(per AEC-Q101-002)
Class H3A(+/- 6000V )
(per AEC-Q101-001)
Class C5(+/- 2000V )
(per AEC-Q101-005)
Yes
†††
†††
†††
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
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3
AUIRFS3107-7P
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
BOTTOM
BOTTOM
100
100
4.5V
4.5V
≤
60μs PULSE WIDTH
Tj = 25°C
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
10
0.1
1
≤
60μs PULSE WIDTH
Tj = 175°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
2.5
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (A)
ID = 160A
VGS = 10V
2.0
100
T J = 175°C
10
T J = 25°C
(Normalized)
1.5
1
VDS = 25V
≤
60μs PULSE WIDTH
2
3
4
5
6
7
8
1.0
0.1
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 160A
VGS , Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 60V
VDS= 38V
C, Capacitance (pF)
10000
Ciss
Coss
1000
Crss
100
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0
25
50
75 100 125 150 175 200 225
Q G , Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
4
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AUIRFS3107-7P
1000
T J = 175°C
100
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
1000
100
10msec
1msec
10
TJ = 25°C
10
DC
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
VSD, Source-to-Drain Voltage (V)
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
100
1000
0.1
VDS, Drain-to-Source Voltage (V)
300
Limited By Package
250
ID, Drain Current (A)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
95
Id = 5mA
90
200
150
100
50
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
85
80
75
70
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
3.5
3.0
2.5
Energy (μJ)
Fig 10.
Drain-to-Source Breakdown Voltage
1400
EAS , Single Pulse Avalanche Energy (mJ)
1200
1000
800
600
400
200
0
ID
TOP
28A
50A
BOTTOM 160A
2.0
1.5
1.0
0.5
0.0
-10
0
10
20
30
40
50
60
70
80
25
50
75
100
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 11.
Typical C
OSS
Stored Energy
Fig 12.
Maximum Avalanche Energy vs. DrainCurrent
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