Silicon Controlled Rectifier, 306A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-209AB
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | International Rectifier （ Infineon ） |
| package instruction | POST/STUD MOUNT, O-MUPM-H3 |
| Reach Compliance Code | compliant |
| Other features | HIGH SPEED |
| Nominal circuit commutation break time | 15 µs |
| Configuration | SINGLE |
| Maximum DC gate trigger current | 200 mA |
| Maximum DC gate trigger voltage | 3 V |
| Maximum holding current | 600 mA |
| JEDEC-95 code | TO-209AB |
| JESD-30 code | O-MUPM-H3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -40 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | POST/STUD MOUNT |
| Peak Reflow Temperature (Celsius) | 260 |
| Certification status | Not Qualified |
| Maximum rms on-state current | 306 A |
| Maximum repetitive peak off-state leakage current | 40000 µA |
| Off-state repetitive peak voltage | 800 V |
| Repeated peak reverse voltage | 800 V |
| surface mount | NO |
| Terminal form | HIGH CURRENT CABLE |
| Terminal location | UPPER |
| Maximum time at peak reflow temperature | 40 |
| Trigger device type | SCR |
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