AUIRFR4615TRL datasheet, PDF - EEWORLD Datasheet

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AUIRFR4615TRL: Description33 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA; CategoryDiscrete semiconductor The transistor; File Size276KB，13 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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AUIRFR4615TRL Overview

33 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

AUIRFR4615TRL Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	TO-252AA
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Other features	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)	109 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	150 V
Maximum drain current (Abs) (ID)	33 A
Maximum drain current (ID)	33 A
Maximum drain-source on-resistance	0.042 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	144 W
Maximum pulsed drain current (IDM)	140 A
surface mount	YES
Terminal surface	MATTE TIN OVER NICKEL
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

AUIRFR4615TRL Related Products

	AUIRFR4615TRL	AUIRFR4615TR	AUIRFR4615TRR	AUIRFU4615
Description	33 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	33 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	33 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	33 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Is it lead-free?	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	TO-252AA	TO-252AA	TO-252AA	TO-251AA
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3
Contacts	3	3	3	3
Reach Compliance Code	compli	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)	109 mJ	109 mJ	109 mJ	109 mJ
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	150 V	150 V	150 V	150 V
Maximum drain current (Abs) (ID)	33 A	33 A	33 A	33 A
Maximum drain current (ID)	33 A	33 A	33 A	33 A
Maximum drain-source on-resistance	0.042 Ω	0.042 Ω	0.042 Ω	0.042 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA	TO-252AA	TO-252AA	TO-251AA
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSIP-T3
JESD-609 code	e3	e3	e3	e3
Humidity sensitivity level	1	1	1	1
Number of components	1	1	1	1
Number of terminals	2	2	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	260	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	144 W	144 W	144 W	144 W
Maximum pulsed drain current (IDM)	140 A	140 A	140 A	140 A
surface mount	YES	YES	YES	NO
Terminal surface	MATTE TIN OVER NICKEL	MATTE TIN OVER NICKEL	MATTE TIN OVER NICKEL	MATTE TIN OVER NICKEL
Terminal form	GULL WING	GULL WING	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	30	30	30
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON

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