IRF842FI datasheet, PDF - EEWORLD Datasheet

IRF842FI: Description4A, 500V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET; CategoryDiscrete semiconductor The transistor; File Size60KB，1 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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IRF842FI Overview

4A, 500V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	STMicroelectronics
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	not_compliant
Other features	HIGH VOLTAGE, FAST SWITCHING
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	4 A
Maximum drain current (ID)	4 A
Maximum drain-source on-resistance	1.1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	40 W
Maximum pulsed drain current (IDM)	28 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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