DATA SHEET
SEMICONDUCTOR
DB101S THRU DB107S
Glass passivated type
FEATURES
•Plastic
package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
•For
surface mounted applications.
•Exceeds
environmental standards of MIL-S-19500 /228
•High
surge current capability
•Ideal
for printed circuit board
•High
temperature soldering : 260
O
C / 10 seconds at terminals
•Pb
free product at available : 99% Sn above meet RoHS
environment substance directive request
SDIP
Unit : inch (mm)
+
.255(6.5)
.245(6.2)
~
~
.011(.28)
.410(10.4)
MAX
.060(1.524)
.040(1.106)
.130(3.30)
.094(2.40)
.045(1.14)
.035(0.89)
.335(8.51)
.335(8.05)
Mechanical data
•Case
: Molded plastic, DFS
•Terminals
: Solder plated, solderable per MIL-STD-750,
Method 2026
•Polarity
: Marked on body
•Mounting
Position : Any
•Weight
: 0.412 gram
.205(5.2)
.195(5.0)
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
•Rating
25 C ambient temperature uniess otherwies specified.
•Single
phase half wave, 60Hz, resistive or inductive load.
•For
capacitive load, derate current by 20%.
PARAMETER
Forward rectified current
Forward surge current
See Fig.1
CONDITIONS
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TA = 25oC
VR = VRRM TA = 125oC
Symbol
IO
IFSM
IR
TSTG
MIN.
TYP.
MAX.
1.0
50
10
100
UNIT
A
A
uA
uA
℃
Reverse current
Storage temperature
-55
+150
SYMBOLS
MARKING
CODE
DB101S
DB102S
DB103S
DB104S
DB105S
DB106S
DB107S
V RRM
(V)
50
100
200
400
600
800
1000
*1
V RMS
(V)
35
70
140
280
420
560
700
*2
V R *3
(V)
50
100
200
400
600
800
1000
V F *4
(V)
Operating
temperature
(℃)
DB101S
DB102S
DB103S
DB104S
DB105S
DB106S
DB107S
2 RMS voltage
1.1
-55 to +150
1 Repetitive peak reverse voltage
3 Continuous reverse voltage
4 Maximum forward voltage
http://www.yeashin.com
1
REV.03 20121001
DEVICE CHARACTERISTICS
DB101S THRU DB107S
3.0
INSTANTANEOUS FWD CURRENT,
AMPERES
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
2.5
2.0
T
J
=25 C
Pulse Width = 200uS
O
1.5
1.0
0.5
0
0
50
100
O
150
AMBIENT TEMPERATURE, C
INSTANTANEOUS FWD VOLTAGE, VOLTS
F I G . 1 D E R AT I N G C U RV E F O R O U T P U T
RECTIFIED CURRENT
FIG.2 TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT,uA
FORWARD SURGE CURRENT, AMPERES pk
(HALF SINE-WAVE)
10
50
T
J
= 125 C
O
40
1.0
30
20
0.1
T
J
= 25
O
C
10
0.01
0
20
40
60
80
100
120
140
0
1
2
6
10
20
40
60
100
PERCENT OF PEAK REVERSE VOLTAGE, %
NO. OF CYCLES AT 60Hz
FIG.3 TYPICAL REVERSE CHARACTERISTICS
FIG.4 MAX NON-REPETITIVE SURGE CURRENT
http://www.yeashin.com
2
REV.03 20121001
Renesas Electronics MCUs
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