DATA SHEET
SEMICONDUCTOR
P4SMFJ Series
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
VOLTAGE - 5.0 to 188 Volts 400 Watt Peak Power Pulse
SMF
FEATURES
•For
surface mounted applications in order to optimize board space.
•Low
profile package
•Built-in
strain relief
•Glass
passivated junction
•Excellent
clamping capability
•Low
inductance
•Fast
response time: typically less than 1.0 ps from 0 volts to BV min
•Typical
IR less than 1µA above 10V
•Plastic
package has Underwriters Laboratory Flammability
Classification 94V-O
•
High temperature soldering : 260
O
C / 10 seconds at terminals
•
Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
MSL:Level 1
•High
temperature soldering : 250°C/10 seconds at terminals.
Unit:inch(mm)
0.110(2.80)
0.095(2.40)
0.056(1.43)
0.054(1.38)
0.141(3.60)
0.126(3.20)
0.189(4.80)
0.173(4.40)
MECHANICAL DATA
•Case:
JEDEC DO-214AC low profile molded plastic
•Terminals:
Solder leads, solderable per MIL-STD-750, Method 2026
•Polarity:
Indicated by cathode band except Bi-directional types.
•Standard
Packageing: 12mm tape per(EIA-481)
•Weight:
0.002 ounces, 0.064 gram
0.195(0.90)TYPICAL
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°Cambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
For Capacitive load derate current by 20%.
RATING
Peak Power Dissipation at TA=25°C, TP=1ms(Note 1,2,5)Fig.1
Peak Forward Surge Current, per Figure 5(Note 3)
Peak Pulse Current Current on 10/1000µs waveform(Note
1,2,5)Fig.2
Steady State Power Dissipation(Note 4)
Operating and Storage Temperature Range
NOTES:
1.Non-repetitive current pulse, per Fig. 3 and derated above TA=25°Cper Fig. 2.
2.Mounted on 5.0mm2 Copper pads to each terminal.
3.8.3ms single half sine-wave, duty cycle= 4 pulses per minutes maximum.
4.lead temperature at 75°C=TL.
5.Peak pluse power waveformis 10/1000µS.
SYMBOL
PPPM
IFSM
IPPM
PM(AV)
TJ, TSTG
VALUE
Minimum 400
40.0
See Table 1
1.0
-55 to +150
UNITS
Watts
Amps
Amps
Watts
°C
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1
0.009(0.22)
0.006(0.15)
0.052(1.30)
0.043(1.10)
REV.02 20120403
DEVICE CHARACTERISTICS
P4SMFJ Series
100
P
PPM
, PEAK PULSE POWER, kW
Non-Repetitve
Pulse Wavefom
Shown in Flgure3
TA=25 C
PEAK PULSE POWER (P
PP
) OR CURRENT(I
PP
)
DERATING IN PERCENTAGE%
100
75
10
50
1.0
25
0.1
0.1US
1.0US
10US
td
,PULSE
100US
WIDTH,
SEC
1.0ms
10ms
0
0
25
TA
,
50
75
100
125
150
175
200
FIGURE 1-PEAK PULSE
POWER RATING CURVE
AMBIENT TEMPERATUER, C
FIGURE2 DERATING CURVE
150
tf=10u sec
TA=25 C
Pulse Width (td) is Defined
as the Point Where the Peak
Current Decays to 50% of Ipp
10,000
Tj=25 C
f=1.0MHZ
Vsig=50mVp-p
I
PPM
, PEAK PULSE CURRENT-%
100
CJ,CAPACITANCE,pF
Peak Value
Ippm
1,000
Measured at
Zero Bias
Half Value-Ipp
2
50
10/1000u sec Waveform
as Defined bye R.E.A.
100
e-kt
td
0
Measured at
Stand-Off
Voltahe(V
MW
)
0
1.0
2.0
t, TIME,ms
3.0
4.0
FIGURE 3-PULSE WAVEFORM
10
1.0
2.0
5.0 10
20
50 100
200
50
I
FSM
,PEAK FORWARE SURGE CURRENT,
AMPERES
T
J
=T
J
max
8.3ms Single Half Since-Wave
JEDEC Method
V(
BR
), BREAKDOWN VOLTAGE, VOLTS
FIGURE 4-TYPICAL CAPACITANCE
40
30
20
10
0
1
2
4
10
20
40
100
T
L
, LEAD TEMPERATURE, C
FIG.5-MAXIMUM NON-REPETITIVE
PEAK FOWARD SURGE CURRENT
http://www.yeashin.com
4
REV.02 20120403
Embedded System
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