P215PH02EN0 datasheet, PDF - EEWORLD Datasheet

P215PH02EN0: DescriptionSilicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),355A I(T),TO-209VAR3/4; CategoryAnalog mixed-signal IC Trigger device; File Size426KB，6 Pages; ManufacturerIXYS

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P215PH02EN0 Overview

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),355A I(T),TO-209VAR3/4

Parameter Name	Attribute value
Maker	IXYS
package instruction	,
Reach Compliance Code	unknown
ECCN code	EAR99
Nominal circuit commutation break time	10 µs
Critical rise rate of minimum off-state voltage	100 V/us
Maximum DC gate trigger current	200 mA
Maximum DC gate trigger voltage	3 V
Maximum holding current	600 mA
Maximum leakage current	30 mA
On-state non-repetitive peak current	5000 A
Maximum on-state current	355000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Off-state repetitive peak voltage	200 V
surface mount	NO
Trigger device type	SCR

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