|
UZVP3306FTA |
UZVP3306FTC |
Description |
Small Signal Field-Effect Transistor, 0.09A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, |
Small Signal Field-Effect Transistor, 0.09A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, |
Is it Rohs certified? |
conform to |
conform to |
Maker |
Zetex Semiconductors |
Zetex Semiconductors |
Reach Compliance Code |
not_compliant |
not_compliant |
ECCN code |
EAR99 |
EAR99 |
Configuration |
SINGLE |
SINGLE |
Minimum drain-source breakdown voltage |
60 V |
60 V |
Maximum drain current (ID) |
0.09 A |
0.09 A |
Maximum drain-source on-resistance |
14 Ω |
14 Ω |
FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
Maximum feedback capacitance (Crss) |
8 pF |
8 pF |
JESD-30 code |
R-PDSO-G3 |
R-PDSO-G3 |
JESD-609 code |
e3 |
e3 |
Humidity sensitivity level |
1 |
1 |
Number of components |
1 |
1 |
Number of terminals |
3 |
3 |
Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
Maximum operating temperature |
150 °C |
150 °C |
Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
Package shape |
RECTANGULAR |
RECTANGULAR |
Package form |
SMALL OUTLINE |
SMALL OUTLINE |
Peak Reflow Temperature (Celsius) |
260 |
260 |
Polarity/channel type |
P-CHANNEL |
P-CHANNEL |
Certification status |
Not Qualified |
Not Qualified |
surface mount |
YES |
YES |
Terminal surface |
MATTE TIN |
MATTE TIN |
Terminal form |
GULL WING |
GULL WING |
Terminal location |
DUAL |
DUAL |
Maximum time at peak reflow temperature |
40 |
40 |
Transistor component materials |
SILICON |
SILICON |