Multi-Port SRAM, 1KX8, 100ns, CMOS, PDIP48
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | IDT (Integrated Device Technology) |
| Objectid | 1122332406 |
| Reach Compliance Code | compliant |
| compound_id | 13111142 |
| Maximum access time | 100 ns |
| I/O type | COMMON |
| JESD-30 code | R-PDIP-T48 |
| JESD-609 code | e0 |
| memory density | 8192 bit |
| Memory IC Type | MULTI-PORT SRAM |
| memory width | 8 |
| Number of ports | 2 |
| Number of terminals | 48 |
| word count | 1024 words |
| character code | 1000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 1KX8 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP48,.6 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | 225 |
| power supply | 5 V |
| Certification status | Not Qualified |
| Filter level | 38535Q/M;38534H;883B |
| Maximum standby current | 0.004 A |
| Minimum standby current | 2 V |
| Maximum slew rate | 0.14 mA |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | TIN LEAD |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 30 |
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