VSC7810X datasheet, PDF - EEWORLD Datasheet

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VSC7810X: DescriptionFIBER OPTIC PHOTODIODE DETECTOR, 700-850nm, PANEL MOUNT, TO-46, TO-56, DIE-6; CategoryWireless rf/communication Optical fiber; File Size185KB，20 Pages; ManufacturerVitesse Semiconductor Corporation; Websitehttp://www.vitesse.com/

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VSC7810X Overview

FIBER OPTIC PHOTODIODE DETECTOR, 700-850nm, PANEL MOUNT, TO-46, TO-56, DIE-6

VSC7810X Parametric

Parameter Name	Attribute value
Maker	Vitesse Semiconductor Corporation
Objectid	1495825279
package instruction	TO-46, TO-56
Reach Compliance Code	unknown
compound_id	8328291
body height	2.1 mm
Body length or diameter	3.85 mm
Communication standards	GBE
Fiber optic equipment types	PHOTODIODE DETECTOR
Installation features	PANEL MOUNT
Maximum operating temperature	70 °C
Minimum operating temperature
Maximum operating wavelength	850 nm
Minimum operating wavelength	700 nm
Nominal operating wavelength	840 nm
Package form	TO-46, TO-56
Responsiveness	2.2 A/W
Maximum supply voltage	5.5 V
Minimum supply voltage	4.5 V
Nominal supply voltage	5 V
surface mount	NO
Transmission type	DIGITAL

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VITESSE

SEMICONDUCTOR CORPORATION

Data Sheet

VSC7810

Features

• Integrated Photodetector/Transimpedance

Ampliﬁer Optimized for High Speed Optical

Communications Applications

• Integrated AGC

• Fibre Channel/Gigabit Ethernet Compatible

Bandwidth

(MHz)

1200

Photodetector/Transimpedance Ampliﬁer

Family for Optical Communication

• High Bandwidth

• Low Input Noise Equivalent Power

• Large Optically Active Area

• Single 5V Power Supply

Input Noise

(

W rms)

0.45

Part Number

VSC7810

Data Rate

Full Speed: 1.25 Gb/s

Optically Active Area

(

m diameter)

100

General Description

The VSC7810 integrated Photodetector/Transimpedance Ampliﬁer provides a highly integrated solution for

converting light from a ﬁber optic communications channel into a differential output voltage. The beneﬁts of

Vitesse Semiconductor’s Gallium Arsenide H-GaAs process are fully utilized to provide very high bandwidth

and low noise in a product with a large optically active area for easy alignment. The sensitivity, duty cycle dis-

tortion and jitter meet or exceed all Fibre Channel and Gigabit Ethernet application requirements. Parts are

available in either die form, ﬂat-windowed packages or in ball-lens packages.

By using a metal-semiconductor-metal (MSM) photodetector with a monolithic integrated transimpedance

ampliﬁer, the input capacitance is lowered which allows for a larger optically active area than in discrete photo-

detectors. Integration also allows superior tracking over process, temperature and voltage between the photode-

tector and the ampliﬁer, resulting in higher performance. This part can easily be used in developing Fibre

Channel Electro-Optic Receivers which exhibit very high performance and ease of use.

VSC7810 Block Diagram

Photodetector/Transimpedance Ampliﬁer

+5V

DOUTP

DOUTN

GND

Both DOUTP and DOUTN are back-terminated to 50Ω.

G52145-0 Rev 4.0

10/8/97

VITESSE

SEMICONDUCTOR CORPORATION

741 Calle Plano, Camarillo, CA 93012 • 805/388-3700 • FAX: 805/987-5896

Page 1

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