TECHNICAL DATA
IC for AC/DC Converter with built–in Power DMOS
Transistor with Operating Frequency 132 ± 8 kHz
Functional equivalent of TNY266 (Power Integrations)
Description
IK3466 is IC for AC/DC converter with build–in power
switch with operating frequency 132 ± 8 kHz realized on the
base of high-voltage BiCDMOS process.
IC performs driving of power built in MOSFET switch,
quantity of energy transferred to load is regulated by means
of MOSFET on-time. So output voltage practically doesn’t
depend from load.
The IC is purposed for adapter battery chargers of the
mobile phones, reserve power supply of PC, TV-sets, AC-
adapters, electrical equipment control units, Integrated
Services Digital Network (ISDN) or Digital Subscriber Line
(DSL) network termination.
ORDERING INFORMATION
Device
IK3466N
IK3466D
IK3466DT
Operating
Temperature Range
Т
А
= -40… + 125
С
Package
DIP-8
SOP-8
SOP-8
Packing
Tube
Tube
Tape& Reel
IK3466
ORDERING INFORMATION
IK3466N Plastic
IK3466D SOIC
Features
Programmable line under-voltage detect circuit
prevents power on/off glitches and minimizes
quantity of external components
132 kHz operation frequency
High output voltage stability
Simple ON/OFF control, no loop compensation
needed
No load consumption < 50 mW with bias winding
and < 250 mW without bias winding at 265 V (AC)
input
High input (supply) voltage makes IC ideal for
charger applications
High bandwidth provides fast turn on with no
overshoot
Built-in current limit and thermal protection circuits
provide high safety
Built-in automatic restart circuit provides short circuit
and open loop protection
Undervoltage detection function
Pin Configuration
2012, April Ver. 00
IK3466
BYPASS
01
240uA
G1
50uA G2
Line under voltage
Error
A3
1
5,8V
4,8V
Regulator
5,8 V
DRAIN
03
Autorestart
counter
VD1
Reset
6,3V
+
-
Current limit
unit
A7
A9
-
A1
&
+
Enable
A8
&
VT5
VT1
1,0V+U
T
EN/UV
02
VT2 1,0V
Jitter
Clock
Thermal
shutdown
DC
MAX
Oscilator
A2
1
&
A4
S
A5
R
Q
A6
&
T1
Q
VT3
VT4
1
Leading
edge
blanking
05
04
SOURCE
A1 – A6, A8 – logic elements;
A7 –dual-threshold comparator;
A9 – current limit comparator;
G1, G2 – DC current source;
T1 – trigger;
VD1 – Zener diode;
VT1 – VT4 - MOS transistors
VT5 – high voltage output n-channel DMOS transistor
Fig. 1 – Electric block diagram
2012, April Ver. 00
IK3466
Table 2 - Absolute Maximum Ratings
Symbol
V
D
I
DMAX
V
EN/UV
I
EN/UV
V
BP
T
stg
Parameter
DRAIN lead supply voltage
Peak current, DRAIN lead,
EN/UV lead voltage
EN/UV lead current
BYPASS lead voltage
Storage temperature
Min
-0,3
-
-0,3
-
-0,3
-60
Target
Max
700
560
9
100
9
150
Unit
V
mA
V
mA
V
o
C
* Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device.
These are stress ratings only and functional operation of the device at these or any other conditions beyond those
indicated under “recommended operating conditions” is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Table 3 – Recommended Operation Mode
Parameter
Symbol
V
DS
I
DS
V
BP
Т
J
DRAIN lead supply voltage
Peak current, DRAIN lead,
BYPASS lead voltage
Junction temperature
Min
50
-
-
-40*
Norm
Max
700
375
6,15
125
Unit
V
mA
V
o
C
________
* Ambient temperature
Table 3 – Electric Parameters IK3466 .
( Т
J
- 40* … +125 C, SOURCE = 0V , unless otherwise specified)
o
Parameter
Operating frequency
Maximum duty cycle
EN/UV pin turnoff threshold
current
EN/UV pin voltage
DRAIN supply current
Symbol
Measurement
mode
Control function
f
OSC
Т
J
= 25
o
C
S1 open
DC
MAX
I
DIS
V
EN
I
S1
I
S2
I
EN/UV
= -125 uA
I
EN/UV
= 25 uA
V
EN/UV
=0 V
EN/UV open
(MOSFET
Switching)
Notes 1, 2
Target
Min.
Max.
124
62
-300
0,4
1,3
140
68
-170
1,5
2,7
500
320
Unit
kHz
%
A
V
A
2012, April Ver. 00
IK3466
Table 3 continued
Parameter
BYPASS pin charge current
I
CH1
Symbol
Mode of
measurements
V
BP
= 0 V,
T
J
= 25
o
C
Note 3
V
BP
= 4 V,
o
T
J
= 25 C
Note 3
Note 3
-
Т
J
= 25°C
Target
Min.
Max.
-7,5
-2,5
Unit
mA
I
CH2
BYPASS pin voltage
BYPASS pin voltage
hysteresis
EN/UV pin line under-voltage
threshold current
Protection circuit
Current limit
Initial current limit
Leading edge blanking time
Thermal Shutdown
Temperature
ON-state switch resistance
V
BP
V
BPH
I
LUV
-4,5
5,6
0,8
44
-1,5
6,15
1,2
54
V
V
A
I
LIMIT
I
INIT
t
LEB
t
SD
di/dt = 70 mA/s
Т
J
= 25°C
Т
J
= 25°C
Note 4
-
325
0.65 x
I
LIMIT(MIN)
170
125
375
mA
mA
ns
o
150
16
24
C
Off-state switch drain current
Breakdown voltage
DRAIN pin supply voltage
EN/UV pin output signal delay
Output parameters
o
Т
J
= 25 C
I
D
=
R
DS(ON)
35mA Т
J
= 100
o
C
V
BP
= 6.2 V,
V
EN/UV
= 0 V,
I
DSS
V
DS
= 560 V,
T
J
= 125
o
C
V
BP
= 6.2 V,
BV
DSS
V
EN/UV
= 0 V,
T
J
= 25
o
C, Note 5
t
EN/UV
A
-
50
V
700
50
-
-
-
10
V
s
NOTES:
1. Total current consumption is the sum of I
S1
and I
DSS
when EN/UV pin is shorted to ground (MOSFET not
switching) and the sum of I
S2
and I
DSS
when EN/UV pin is open (MOSFET switching).
2. Consumption current measurement during the output MOSFET is switching can be performed at 6.1 V on
BYPASS pin.
3. BP pin is not purposed for sourcing supply current to external circuitry.
4. This parameter is derived from characterization.
5. Shutdown voltage can be verified under the specification with minimum of BV
DSS
on an inclined DRAIN pin
voltage closely, but not exceeding minimum of BV
DSS
6. Parameters are guaranteed for constant junction temperature Т
J
. Measurements of parameters have to be
processed in pulse modes.
_______________
* Ambient temperature
2012, April Ver. 00
IK3466
Table 4 – Typical Electric Parameters of IK3466
(on default T
A
= 25 C, SOURCE = 0 V, unless otherwise specified)
o
Parameter
Max deviation
Current limit delay
Thermal shutdown hysteresis
Rise Time
Fall Time
Output disable setup time
Auto-Restart ON-Time
Auto-Restart Duty Cycle
Symbol
t
ILD
t
R
t
F
t
DST
t
AR
D
CAR
Mode of measurement
Т
J
= 25 C, Note 1, 2
Measured in a typical
feedback IC application
Т
J
= 25
o
C, Note 3
o
Typical
value
8
150
70
50
50
0,5
50
5,6
Unit
kHz
ns
o
C
ns
ns
s
ms
%
Note
1. This parameter is derived from characterization.
2. This parameter is derived from the change in current limit measured at 1x and 4x of the di/dt shown in the
I
LIMIT
specification.
3. Auto-restart on time has the same temperature characteristics as the oscillator (inversely proportional to
frequency).
2012, April Ver. 00
Analog electronics
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