Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | SENSITRON |
package instruction | FLANGE MOUNT, R-CSFM-T3 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 100 V |
Maximum drain current (ID) | 13 A |
Maximum drain-source on-resistance | 0.24 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-CSFM-T3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Package body material | CERAMIC, METAL-SEALED COFIRED |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | P-CHANNEL |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Transistor component materials | SILICON |