Power Field-Effect Transistor, 5.6A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SHD-6, 3 PIN
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | SENSITRON |
package instruction | SMALL OUTLINE, R-CDSO-N3 |
Contacts | 3 |
Reach Compliance Code | compliant |
Shell connection | DRAIN |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 1000 V |
Maximum drain current (ID) | 5.6 A |
Maximum drain-source on-resistance | 2 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-CDSO-N3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Package body material | CERAMIC, METAL-SEALED COFIRED |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | NO LEAD |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Transistor component materials | SILICON |