Laser Diode, 810nm, TO-3, 8 PIN
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | SONY |
Objectid | 1494208212 |
package instruction | TO-3, 8 PIN |
Reach Compliance Code | unknown |
compound_id | 11287893 |
Configuration | SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER |
JESD-609 code | e0 |
Installation features | THROUGH HOLE MOUNT |
Number of functions | 1 |
Maximum operating temperature | 30 °C |
Minimum operating temperature | -10 °C |
Optoelectronic device types | LASER DIODE |
Nominal output power | 450 mW |
peak wavelength | 810 nm |
Semiconductor material | GaAlAs |
shape | ROUND |
size | 5 mm |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |
Maximum threshold current | 600 mA |
SLD303WT-2 | SLD303WT-3 | SLD303WT-25 | SLD303WT-24 | SLD303WT-1 | SLD303WT-21 | |
---|---|---|---|---|---|---|
Description | Laser Diode, 810nm, TO-3, 8 PIN | Laser Diode, 830nm, TO-3, 8 PIN | Laser Diode, 810nm, TO-3, 8 PIN | Laser Diode, 807nm, TO-3, 8 PIN | Laser Diode, 785nm, TO-3, 8 PIN | Laser Diode, 798nm, TO-3, 8 PIN |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
package instruction | TO-3, 8 PIN | TO-3, 8 PIN | TO-3, 8 PIN | TO-3, 8 PIN | TO-3, 8 PIN | TO-3, 8 PIN |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknow |
Configuration | SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER | SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER | SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER | SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER | SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER | SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER |
JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 |
Installation features | THROUGH HOLE MOUNT | THROUGH HOLE MOUNT | THROUGH HOLE MOUNT | THROUGH HOLE MOUNT | THROUGH HOLE MOUNT | THROUGH HOLE MOUNT |
Number of functions | 1 | 1 | 1 | 1 | 1 | 1 |
Maximum operating temperature | 30 °C | 30 °C | 30 °C | 30 °C | 30 °C | 30 °C |
Minimum operating temperature | -10 °C | -10 °C | -10 °C | -10 °C | -10 °C | -10 °C |
Optoelectronic device types | LASER DIODE | LASER DIODE | LASER DIODE | LASER DIODE | LASER DIODE | LASER DIODE |
Nominal output power | 450 mW | 450 mW | 450 mW | 450 mW | 450 mW | 450 mW |
peak wavelength | 810 nm | 830 nm | 810 nm | 807 nm | 785 nm | 798 nm |
Semiconductor material | GaAlAs | GaAlAs | GaAlAs | GaAlAs | GaAlAs | GaAlAs |
shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
size | 5 mm | 5 mm | 5 mm | 5 mm | 5 mm | 5 mm |
surface mount | NO | NO | NO | NO | NO | NO |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Maximum threshold current | 600 mA | 600 mA | 600 mA | 600 mA | 600 mA | 600 mA |