SYS8512FKXI-55 datasheet, PDF - EEWORLD Datasheet

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SYS8512FKXI-55: DescriptionSRAM Module, 512KX8, 55ns, CMOS, PDIP32; Categorystorage storage; File Size363KB，7 Pages; ManufacturerSyntaq Technology Inc

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SYS8512FKXI-55 Overview

SRAM Module, 512KX8, 55ns, CMOS, PDIP32

SYS8512FKXI-55 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Syntaq Technology Inc
package instruction	DIP, DIP32,.6
Reach Compliance Code	unknown
Maximum access time	55 ns
I/O type	COMMON
JESD-30 code	R-PDIP-T32
JESD-609 code	e0
memory density	4194304 bit
Memory IC Type	SRAM MODULE
memory width	8
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.0005 A
Minimum standby current	4.5 V
Maximum slew rate	0.1 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

SYS8512FKXI-55 Related Products

	SYS8512FKXI-55	SYS8512FKXL-85	SYS8512FKXLI-55	SYS8512FKXI-85	SYS8512FKXLI-10	SYS8512FKXI-70	SYS8512FKXL-10	SYS8512FKX-85	SYS8512FKX-70
Description	SRAM Module, 512KX8, 55ns, CMOS, PDIP32	SRAM Module, 512KX8, 85ns, CMOS, PDIP32	SRAM Module, 512KX8, 55ns, CMOS, PDIP32	SRAM Module, 512KX8, 85ns, CMOS, PDIP32	SRAM Module, 512KX8, 100ns, CMOS, PDIP32	SRAM Module, 512KX8, 70ns, CMOS, PDIP32	SRAM Module, 512KX8, 100ns, CMOS, PDIP32	SRAM Module, 512KX8, 85ns, CMOS, PDIP32	SRAM Module, 512KX8, 70ns, CMOS, PDIP32
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	DIP, DIP32,.6	DIP, DIP32,.6	DIP, DIP32,.6	DIP, DIP32,.6	DIP, DIP32,.6	DIP, DIP32,.6	DIP, DIP32,.6	DIP, DIP32,.6	DIP, DIP32,.6
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknow
Maximum access time	55 ns	85 ns	55 ns	85 ns	100 ns	70 ns	100 ns	85 ns	70 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PDIP-T32	R-PDIP-T32	R-PDIP-T32	R-PDIP-T32	R-PDIP-T32	R-PDIP-T32	R-PDIP-T32	R-PDIP-T32	R-PDIP-T32
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0
memory density	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bi
Memory IC Type	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE
memory width	8	8	8	8	8	8	8	8	8
Number of terminals	32	32	32	32	32	32	32	32	32
word count	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
character code	512000	512000	512000	512000	512000	512000	512000	512000	512000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	70 °C	85 °C	85 °C	85 °C	85 °C	70 °C	70 °C	70 °C
Minimum operating temperature	-40 °C	-	-40 °C	-40 °C	-40 °C	-40 °C	-	-	-
organize	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP
Encapsulate equivalent code	DIP32,.6	DIP32,.6	DIP32,.6	DIP32,.6	DIP32,.6	DIP32,.6	DIP32,.6	DIP32,.6	DIP32,.6
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.0005 A	0.00028 A	0.00028 A	0.0005 A	0.00028 A	0.0005 A	0.00028 A	0.0005 A	0.0005 A
Minimum standby current	4.5 V	2 V	2 V	4.5 V	2 V	4.5 V	2 V	4.5 V	4.5 V
Maximum slew rate	0.1 mA	0.1 mA	0.1 mA	0.1 mA	0.1 mA	0.1 mA	0.1 mA	0.1 mA	0.1 mA
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maker	Syntaq Technology Inc	-	Syntaq Technology Inc	Syntaq Technology Inc	Syntaq Technology Inc	Syntaq Technology Inc	Syntaq Technology Inc	Syntaq Technology Inc	Syntaq Technology Inc

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