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2SK1479-B

Description
Small Signal Field-Effect Transistor, 0.005A I(D), 1-Element, N-Channel, Silicon, Junction FET
CategoryDiscrete semiconductor    The transistor   
File Size177KB,4 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
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2SK1479-B Overview

Small Signal Field-Effect Transistor, 0.005A I(D), 1-Element, N-Channel, Silicon, Junction FET

2SK1479-B Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Maximum drain current (ID)0.005 A
FET technologyJUNCTION
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1

2SK1479-B Related Products

2SK1479-B 2SK1479-A
Description Small Signal Field-Effect Transistor, 0.005A I(D), 1-Element, N-Channel, Silicon, Junction FET Small Signal Field-Effect Transistor, 0.005A I(D), 1-Element, N-Channel, Silicon, Junction FET
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Configuration SINGLE SINGLE
Maximum drain current (ID) 0.005 A 0.005 A
FET technology JUNCTION JUNCTION
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 1 1
Number of terminals 3 3
Operating mode DEPLETION MODE DEPLETION MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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