Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, P-Channel, Silicon, Junction FET, TO-236, SC-59, MINI3-G1, 3 PIN
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Parts packaging code | SOT-23 |
package instruction | SMALL OUTLINE, R-PDSO-G3 |
Contacts | 3 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Other features | LOW NOISE |
Configuration | SINGLE |
Maximum drain current (ID) | 0.02 A |
FET technology | JUNCTION |
JEDEC-95 code | TO-236 |
JESD-30 code | R-PDSO-G3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | DEPLETION MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | P-CHANNEL |
Maximum power dissipation(Abs) | 0.15 W |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | GULL WING |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |
2SJ163P | 2SJ163O | 2SJ163Q | 2SJ163R | |
---|---|---|---|---|
Description | Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, P-Channel, Silicon, Junction FET, TO-236, SC-59, MINI3-G1, 3 PIN | Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, P-Channel, Silicon, Junction FET, TO-236, SC-59, 3 PIN | Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, P-Channel, Silicon, Junction FET, TO-236, SC-59, MINI3-G1, 3 PIN | Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, P-Channel, Silicon, Junction FET, TO-236, SC-59, MINI3-G1, 3 PIN |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
Parts packaging code | SOT-23 | SOT-23 | SOT-23 | SOT-23 |
package instruction | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
Contacts | 3 | 3 | 3 | 3 |
Reach Compliance Code | unknow | unknow | unknow | unknow |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
Other features | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
Maximum drain current (ID) | 0.02 A | 0.02 A | 0.02 A | 0.02 A |
FET technology | JUNCTION | JUNCTION | JUNCTION | JUNCTION |
JEDEC-95 code | TO-236 | TO-236 | TO-236 | TO-236 |
JESD-30 code | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
JESD-609 code | e0 | e0 | e0 | e0 |
Number of components | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 | 3 |
Operating mode | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
Polarity/channel type | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
Maximum power dissipation(Abs) | 0.15 W | 0.15 W | 0.15 W | 0.15 W |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | YES | YES | YES | YES |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal form | GULL WING | GULL WING | GULL WING | GULL WING |
Terminal location | DUAL | DUAL | DUAL | DUAL |
transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON | SILICON | SILICON |
Base Number Matches | 1 | 1 | 1 | 1 |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
Maximum time at peak reflow temperature | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |