2SK2499-AZ datasheet, PDF - EEWORLD Datasheet

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2SK2499-AZ: Description2SK2499-AZ; CategoryDiscrete semiconductor The transistor; File Size315KB，10 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/; Environmental Compliance

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2SK2499-AZ Overview

2SK2499-AZ

2SK2499-AZ Parametric

Parameter Name	Attribute value
Brand Name	Renesas
Is it Rohs certified?	conform to
Parts packaging code	MP-25
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Manufacturer packaging code	PRSS0004AH-A3
Reach Compliance Code	compli
ECCN code	EAR99
Factory Lead Time	1 week
Avalanche Energy Efficiency Rating (Eas)	250 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	50 A
Maximum drain current (ID)	50 A
Maximum drain-source on-resistance	0.014 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	75 W
Maximum pulsed drain current (IDM)	200 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

2SK2499-AZ Related Products

	2SK2499-AZ	2SK2499-Z-AZ	2SK2499-Z-E1-AZ	2SK2499-Z	2SK2499
Description	2SK2499-AZ	2SK2499-Z-AZ	2SK2499-Z-E1-AZ	50A, 60V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, 3 PIN	50A, 60V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PACKAGE-3
Parts packaging code	MP-25	MP-25Z	MP-25Z	SFM	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3	,	,	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3	3	3	3
Reach Compliance Code	compli	compli	compli	unknow	unknow
Base Number Matches	1	1	1	1	1
Brand Name	Renesas	Renesas	Renesas	-	-
Is it Rohs certified?	conform to	conform to	conform to	-	incompatible
Manufacturer packaging code	PRSS0004AH-A3	PRSS0004AJ-B3	PRSS0004AJ-B3	-	-
ECCN code	EAR99	-	-	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	250 mJ	-	-	250 mJ	250 mJ
Shell connection	DRAIN	-	-	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	-	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	-	-	60 V	60 V
Maximum drain current (Abs) (ID)	50 A	-	-	50 A	50 A
Maximum drain current (ID)	50 A	-	-	50 A	50 A
Maximum drain-source on-resistance	0.014 Ω	-	-	0.014 Ω	0.014 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	-	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3	-	-	R-PSSO-G2	R-PSFM-T3
Number of components	1	-	-	1	1
Number of terminals	3	-	-	2	3
Operating mode	ENHANCEMENT MODE	-	-	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	-	-	150 °C	150 °C
Package body material	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	-	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	-	-	SMALL OUTLINE	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	-	-	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	75 W	-	-	75 W	75 W
Maximum pulsed drain current (IDM)	200 A	-	-	200 A	200 A
Certification status	Not Qualified	-	-	Not Qualified	Not Qualified
surface mount	NO	-	-	YES	NO
Terminal form	THROUGH-HOLE	-	-	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	-	-	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
transistor applications	SWITCHING	-	-	SWITCHING	SWITCHING
Transistor component materials	SILICON	-	-	SILICON	SILICON

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