Silicon Controlled Rectifier, 1180A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, EPUK-3
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | International Rectifier ( Infineon ) |
Parts packaging code | BUTTON |
package instruction | DISK BUTTON, O-CEDB-N2 |
Contacts | 2 |
Reach Compliance Code | compliant |
Other features | HIGH SPEED |
Shell connection | ISOLATED |
Nominal circuit commutation break time | 20 µs |
Configuration | SINGLE |
Maximum DC gate trigger current | 200 mA |
Maximum DC gate trigger voltage | 3 V |
Maximum holding current | 600 mA |
JEDEC-95 code | TO-200AB |
JESD-30 code | O-CEDB-N2 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -40 °C |
Package body material | CERAMIC, METAL-SEALED COFIRED |
Package shape | ROUND |
Package form | DISK BUTTON |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Certification status | Not Qualified |
Maximum rms on-state current | 1180 A |
Maximum repetitive peak off-state leakage current | 50000 µA |
Off-state repetitive peak voltage | 800 V |
Repeated peak reverse voltage | 800 V |
surface mount | YES |
Terminal surface | TIN LEAD |
Terminal form | NO LEAD |
Terminal location | END |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Trigger device type | SCR |