Bulletin I25171 rev. B 03/94
ST333S SERIES
INVERTER GRADE THYRISTORS
Stud Version
Features
All diffused design
Center amplifying gate
Guaranteed high dv/dt
Guaranteed high di/dt
High surge current capability
Low thermal impedance
High speed performance
330A
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
range
T
J
ST333S
330
75
518
11000
11520
605
550
400 to 800
10 to 30
- 40 to 125
Units
A
°C
A
A
A
KA
2
s
KA
2
s
V
µs
°C
case style
TO-209AE (TO-118)
www.irf.com
1
ST333S Series
Bulletin I25171 rev. B 03/94
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
V
DRM
/V
RRM
, maximum
repetitive peak voltage
V
ST333S
04
08
400
800
V
RSM
, maximum
non-repetitive peak voltage
V
500
900
I
DRM
/I
RRM
max.
@ T
J
= T
J
max.
mA
50
Current Carrying Capability
Frequency
180
o
el
50Hz
400Hz
1000Hz
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
Case temperature
Equivalent values for RC circuit
840
650
430
140
50
V
DRM
50
50
I
TM
180
o
el
600
450
230
60
50
50
75
1280
1280
1090
490
50
V
DRM
-
50
I
TM
100µs
1040
910
730
250
50
-
75
5430
2150
1080
400
50
V
DRM
-
50
I
TM
Units
4350
1560
720
190
50
-
75
V
A/µs
°C
A
10Ω / 0.47µF
10Ω / 0.47µF
10Ω / 0.47µF
On-state Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Case temperature
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one half cycle,
non-repetitive surge current
ST333S
330
75
518
11000
11520
9250
9700
Units
A
°C
Conditions
180° conduction, half sine wave
DC @ 63°C case temperature
t = 10ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
I t
2
Maximum I t for fusing
2
605
550
430
390
KA
2
s
t = 10ms
t = 8.3ms
I
√t
2
Maximum I
√t
for fusing
2
6050
KA
√s
2
t = 0.1 to 10ms, no voltage reapplied
2
www.irf.com
ST333S Series
Bulletin I25171 rev. B 03/94
On-state Conduction
Parameter
V
TM
Max. peak on-state voltage
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
ST333S
1.51
0.91
0.92
0.58
Units
Conditions
I
TM
= 1040A, T
J
= T
J
max, t
p
= 10ms sine wave pulse
V
T(TO)1
Low level value of threshold
V
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
Low level value of forward
slope resistance
mΩ
0.58
600
1000
mA
High level value of forward
slope resistance
Maximum holding current
Typical latching current
r
t
2
I
H
I
L
T
J
= 25°C, I
T
> 30A
T
J
= 25°C, V
A
= 12V, Ra = 6Ω, I
G
= 1A
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
t
d
ST333S
1000
1.0
Min
10
Max
30
Units
A/µs
Conditions
T
J
= T
J
max, V
DRM
= rated V
DRM
I
TM
= 2 x di/dt
T
J
= 25°C, V
DM
= rated V
DRM
, I
TM
= 50A DC, t
p
= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
T
J
= T
J
max, I
TM
= 550A, commutating di/dt = 40A/µs
V
R
= 50V, t
p
= 500µs, dv/dt: see table in device code
Typical delay time
µs
t
q
Max. turn-off time
Blocking
Parameter
dv/dt
I
RRM
I
DRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
ST333S
500
50
Units
V/µs
mA
Conditions
T
J
= T
J
max. linear to 80% V
DRM
, higher value
available on request
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
Triggering
Parameter
P
GM
Maximum peak gate power
ST333S
60
10
10
20
Units
W
A
Conditions
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
≤
5ms
P
G(AV)
Maximum average gate power
I
GM
+V
GM
-V
GM
I
GT
V
GT
I
GD
V
GD
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
Max. DC gate current required
to trigger
Max. DC gate voltage required
to trigger
Max. DC gate current not to trigger
Max. DC gate voltage not to trigger
V
5
200
3
20
0.25
mA
T
J
= T
J
max, t
p
≤
5ms
T
J
= 25°C, V
A
= 12V, Ra = 6Ω
V
mA
V
T
J
= T
J
max, rated V
DRM
applied
www.irf.com
3
ST333S Series
Bulletin I25171 rev. B 03/94
Thermal and Mechanical Specifications
Parameter
T
J
T
stg
R
thJC
R
thCS
T
Max. junction operating temperature range
Max. storage temperature range
Max. thermal resistance, junction to case
Max. thermal resistance, case to heatsink
Mounting torque, ± 10%
ST333S
-40 to 125
-40 to 150
0.10
0.03
48.5
(425)
Units
°C
Conditions
DC operation
K/W
Nm
(Ibf-in)
g
See Outline Table
Mounting surface, smooth, flat and greased
Non lubricated threads
wt
Approximate weight
Case style
535
TO-209AE (TO-118)
∆R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction Rectangular conduction Units
0.011
0.013
0.017
0.025
0.041
0.008
0.014
0.018
0.026
0.042
K/W
Conditions
T
J
= T
J
max.
Ordering Information Table
Device Code
ST
1
33
2
3
3
S
4
08
5
P
6
F
7
M
8
0
9
10
1
2
3
4
5
6
7
8
9
- Thyristor
- Essential part number
- 3 = Fast turn off
- S = Compression bonding Stud
- Voltage code: Code x 100 = V
RRM
(See Voltage Ratings table)
- P = Stud base 3/4" 16UNF-2A
M = Stud base metric threads M24 x 1.5
- Reapplied dv/dt code (for t
q
test condition)
- t
q
code
- 0 = Eyelet terminals (Gate and Aux. Cathode Leads)
1 = Fast-on terminals (Gate and Aux. Cathode Leads)
3 = Threaded top terminal 3/8" 24UNF-2A
dv/dt - t
q
combinations available
dv/dt (V/µs)
10
12
15
t (µs)
q
18
20
25
30
20
CN
CM
CL
CP
CK
--
--
50
DN
DM
DL
DP
DK
--
--
100
EN
EM
EL
EP
EK
--
--
200
--
FM *
FL *
FP
FK
FJ
--
400
--
--
HL
HP
HK
HJ
HH
10
- Critical dv/dt:
None = 500V/µsec (Standard value)
L
= 1000V/µsec (Special selection)
*
Standard part number.
All other types available only on request.
4
www.irf.com
ST333S Series
Bulletin I25171 rev. B 03/94
Outline Table
CERAMIC HOUSING
22 (0.87) MAX.
4.3 (0.17) DIA.
4.5 (0.18) MAX.
(0 .
37
)M
9 .5
IN
.
WHITE GATE
(0
10.5 (0.41)
NOM.
RED SILICON RUBBER
RED CATHODE
245 (9.65) ± 10 (0.39)
FLEXIBLE LEAD
C.S. 50mm 2
(0.078 s.i.)
38 (1.50)
MAX. DIA.
255 (10.04)
245 (9.65)
22
.86
)
WHITE SHRINK
RED SHRINK
27.5 (1.08)
MAX.
SW 45
21 (0.82) MAX.
47 (1.85)
MAX.
3/4"16 UNF-2A
49 (1.92) MAX.
* FOR METRIC DEVICE: M24 X 1.5 - LENGHT SCREW 21 (0.83) MAX.
Case Style TO-209AE (TO-118)
All dimensions in millimeters (inches)
CERAMIC HOUSING
17 (0.67) DIA.
3/8"-24UNF-2A
25 (0.98)
77.5 (3.05)
80.5 (3.17)
MI
N.
Fast-on Terminals
AMP. 280000-1
REF-250
38 (1.5)
DIA. MAX.
47 (1.85)
21 (0.83)
27.5 (1.08)
All dimensions in millimeters (inches)
MAX.
SW 45
3/4"-16UNF-2A *
* FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX.
MAX.
Case Style TO-209AE (TO-118)
with top thread terminal 3/8"
MAX.
www.irf.com
5
京公网安备 11010802033920号
EEWORLD
