There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 4 is based on T
C
= 25_C; T
J(pk)
is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% provided T
J(pk)
v
150_C. T
J(pk)
may be calculated from the data in
Figure 3. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown. Second
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltage shown on
Figure 4 may be found at any case temperature by using the
appropriate curve on Figure 6.
POWER DERATING FACTOR (%)
10
7.0
5.0
3.0
t, TIME (
μ
s)
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.05 0.07 0.1
100
t
s
V
CC
= 125 V
I
C
/I
B
= 5.0
T
J
= 25°C
SECOND BREAKDOWN DERATING
80
60
THERMAL DERATING
40
t
f
20
0
0.2 0.3
0.5 0.7 1.0
2.0
I
C
, COLLECTOR CURRENT (AMP)
3.0
5.0
0
20
40
60
80
100
120
T
C
, CASE TEMPERATURE (°C)
140
160
Figure 5. Turn−Off Time
Figure 6. Power Derating
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3
2N6497
100
70
hFE , DC CURRENT GAIN
50
25°C
30
20
−55
°C
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
T
J
= 150°C
4.0
T
J
= 25°C
3.2
V
CE
= 10 V
2.4
1.6
I
C
= 1.0 A
0.8
2.0 A
3.0 A
5.0 A
10
7.0
5.0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0
I
C
, COLLECTOR CURRENT (AMP)
3.0
5.0
0
0.01 0.02
0.05
0.1 0.2
0.5
1.0
I
B
, BASE CURRENT (mA)
2.0
5.0
10
Figure 7. DC Current Gain
Figure 8. Collector Saturation Region
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
1.4
1.2
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.05 0.07 0.1
V
CE(sat)
@ I
C
/I
B
= 5.0
0.2
0.3
0.5 0.7
1.0
V
BE
@ V
CE
= 10 V
T
J
= 25°C
+4.0
+3.0
+2.0
+1.0
0
−1.0
−2.0
q
VB
for V
BE
*q
VC
for V
CE(sat)
25°C to 150°C
*APPLIES FOR I
C
/I
B
v
hFE @ VCE
+
10 V
3
V
BE(sat)
@ I
C
/I
B
= 5.0
−55
°C
to 25°C
25°C to 150°C
−55 to 25°C
I
C
/I
B
= 2.5
2.0 3.0
5.0
−3.0
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1.0
2.0 3.0
5.0
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
Figure 9. “On” Voltages
Figure 10. Temperature Coefficients
10
4
IC, COLLECTOR CURRENT (
μ
A)
10
3
10
2
10
1
10
0
10
−1
10
−2
−0.1
25°C
REVERSE
−0.2
FORWARD
0
+0.2
+0.4
+0.6
V
CE
= 200 V
1000
700
500
C, CAPACITANCE (pF)
300
200
T
J
= 25°C
100
70
50
30
20
10
0.4 0.6 1.0
2.0 4.0 6.0 10
20
40 60 100
V
R
, REVERSE VOLTAGE (VOLTS)
200 400
C
ob
C
ib
T
J
= 150°C
100°C
V
BE
, BASE−EMITTER VOLTAGE (VOLTS)
Figure 11. Collector Cutoff Region
Figure 12. Capacitance
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4
2N6497
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−09
ISSUE AD
−T−
B
4
SEATING
PLANE
F
T
S
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−− 0.080
BASE
COLLECTOR
EMITTER
COLLECTOR
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
Q
1 2 3
A
U
K
H
Z
L
V
G
D
N
R
J
STYLE 1:
PIN 1.
2.
3.
4.
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