7.7 A, 60 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
| Parameter Name | Attribute value |
| Number of terminals | 2 |
| Minimum breakdown voltage | 60 V |
| Processing package description | Lead FREE, Plastic, DPAK-3 |
| Lead-free | Yes |
| EU RoHS regulations | Yes |
| state | TRANSFERRED |
| packaging shape | Rectangle |
| Package Size | SMALL OUTLINE |
| surface mount | Yes |
| Terminal form | GULL WING |
| terminal coating | MATTE Tin OVER Nickel |
| Terminal location | single |
| Packaging Materials | Plastic/Epoxy |
| structure | Single WITH BUILT-IN diode |
| Shell connection | DRAIN |
| Number of components | 1 |
| transistor applications | switch |
| Transistor component materials | silicon |
| Channel type | N channel |
| field effect transistor technology | Metal-OXIDE SEMICONDUCTOR |
| operating mode | ENHANCEMENT |
| Transistor type | universal power supply |
| Maximum leakage current | 7.7 A |
| Rated avalanche energy | 47 mJ |
| Maximum drain on-resistance | 0.2000 ohm |
| Maximum leakage current pulse | 31 A |
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