|
2N5549 |
3N225A |
3N206 |
3N204 |
Description |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-18 |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-72, 4 PIN |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-72 |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-72 |
Is it Rohs certified? |
incompatible |
incompatible |
incompatible |
incompatible |
Reach Compliance Code |
_compli |
not_compliant |
not_compliant |
not_compliant |
Configuration |
SINGLE |
SINGLE |
SINGLE |
SINGLE |
FET technology |
JUNCTION |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
Maximum feedback capacitance (Crss) |
2 pF |
0.03 pF |
0.03 pF |
0.03 pF |
highest frequency band |
VERY HIGH FREQUENCY BAND |
ULTRA HIGH FREQUENCY BAND |
VERY HIGH FREQUENCY BAND |
VERY HIGH FREQUENCY BAND |
JESD-30 code |
O-MBCY-W3 |
O-MBCY-W4 |
O-MBCY-W4 |
O-MBCY-W4 |
Number of components |
1 |
1 |
1 |
1 |
Number of terminals |
3 |
4 |
4 |
4 |
Operating mode |
DEPLETION MODE |
DUAL GATE, DEPLETION MODE |
DUAL GATE, DEPLETION MODE |
DUAL GATE, DEPLETION MODE |
Maximum operating temperature |
200 °C |
200 °C |
200 °C |
200 °C |
Package body material |
METAL |
METAL |
METAL |
METAL |
Package shape |
ROUND |
ROUND |
ROUND |
ROUND |
Package form |
CYLINDRICAL |
CYLINDRICAL |
CYLINDRICAL |
CYLINDRICAL |
Peak Reflow Temperature (Celsius) |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
Maximum power dissipation(Abs) |
0.36 W |
0.36 W |
0.36 W |
0.36 W |
Certification status |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
surface mount |
NO |
NO |
NO |
NO |
Terminal form |
WIRE |
WIRE |
WIRE |
WIRE |
Terminal location |
BOTTOM |
BOTTOM |
BOTTOM |
BOTTOM |
Maximum time at peak reflow temperature |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
Transistor component materials |
SILICON |
SILICON |
SILICON |
SILICON |
Base Number Matches |
1 |
1 |
1 |
1 |
package instruction |
CYLINDRICAL, O-MBCY-W3 |
CYLINDRICAL, O-MBCY-W4 |
CYLINDRICAL, O-MBCY-W4 |
- |
Shell connection |
GATE |
- |
SOURCE AND SUBSTRATE |
SOURCE AND SUBSTRATE |
JEDEC-95 code |
TO-18 |
- |
TO-72 |
TO-72 |
transistor applications |
SWITCHING |
- |
AMPLIFIER |
AMPLIFIER |
Minimum drain-source breakdown voltage |
- |
20 V |
25 V |
25 V |
Maximum drain current (Abs) (ID) |
- |
0.05 A |
0.05 A |
0.05 A |