2SB1086/NQ datasheet, PDF - EEWORLD Datasheet

2SB1086/NQ: DescriptionPower Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin; CategoryDiscrete semiconductor The transistor; File Size76KB，2 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/

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2SB1086/NQ Overview

Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Parameter Name	Attribute value
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	1.5 A
Collector-emitter maximum voltage	120 V
Configuration	SINGLE
Minimum DC current gain (hFE)	56
JEDEC-95 code	TO-126
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Maximum power consumption environment	10 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz
VCEsat-Max	2 V
Base Number Matches	1

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