IS61NP25636-150TQ datasheet, PDF

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IS61NP25636-150TQ: DescriptionZBT SRAM, 256KX36, 3.8ns, CMOS, PQFP100, TQFP-100; Categorystorage storage; File Size154KB，20 Pages; ManufacturerIntegrated Silicon Solution ( ISSI )

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IS61NP25636-150TQ Overview

ZBT SRAM, 256KX36, 3.8ns, CMOS, PQFP100, TQFP-100

IS61NP25636-150TQ Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Integrated Silicon Solution ( ISSI )
Parts packaging code	QFP
package instruction	TQFP-100
Contacts	100
Reach Compliance Code	compliant
ECCN code	3A991.B.2.A
Maximum access time	3.8 ns
Maximum clock frequency (fCLK)	150 MHz
I/O type	COMMON
JESD-30 code	R-PQFP-G100
JESD-609 code	e0
length	20 mm
memory density	9437184 bit
Memory IC Type	ZBT SRAM
memory width	36
Number of functions	1
Number of terminals	100
word count	262144 words
character code	256000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX36
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	LQFP
Encapsulate equivalent code	QFP100,.63X.87
Package shape	RECTANGULAR
Package form	FLATPACK, LOW PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
power supply	2.5,3.3 V
Certification status	Not Qualified
Maximum seat height	1.6 mm
Maximum standby current	0.02 A
Minimum standby current	3.14 V
Maximum slew rate	0.38 mA
Maximum supply voltage (Vsup)	3.465 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	30
width	14 mm

IS61NP25636-150TQ Related Products

	IS61NP25636-150TQ	IS61NP51218-150TQ	IS61NP25632-150TQ	IS61NP25632-150B	IS61NP51218-150B	IS61NP25636-150B
Description	ZBT SRAM, 256KX36, 3.8ns, CMOS, PQFP100, TQFP-100	ZBT SRAM, 512KX18, 3.8ns, CMOS, PQFP100, TQFP-100	ZBT SRAM, 256KX32, 3.8ns, CMOS, PQFP100, TQFP-100	ZBT SRAM, 256KX32, 3.8ns, CMOS, PBGA119, PLASTIC, BGA-119	ZBT SRAM, 512KX18, 3.8ns, CMOS, PBGA119, PLASTIC, BGA-119	ZBT SRAM, 256KX36, 3.8ns, CMOS, PBGA119, PLASTIC, BGA-119
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
Parts packaging code	QFP	QFP	QFP	BGA	BGA	BGA
package instruction	TQFP-100	TQFP-100	TQFP-100	PLASTIC, BGA-119	PLASTIC, BGA-119	PLASTIC, BGA-119
Contacts	100	100	100	119	119	119
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compli
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	3.8 ns	3.8 ns	3.8 ns	3.8 ns	3.8 ns	3.8 ns
Maximum clock frequency (fCLK)	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PBGA-B119	R-PBGA-B119	R-PBGA-B119
JESD-609 code	e0	e0	e0	e0	e0	e0
length	20 mm	20 mm	20 mm	22 mm	22 mm	22 mm
memory density	9437184 bit	9437184 bit	8388608 bit	8388608 bit	9437184 bit	9437184 bi
Memory IC Type	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM
memory width	36	18	32	32	18	36
Number of functions	1	1	1	1	1	1
Number of terminals	100	100	100	119	119	119
word count	262144 words	524288 words	262144 words	262144 words	524288 words	262144 words
character code	256000	512000	256000	256000	512000	256000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	256KX36	512KX18	256KX32	256KX32	512KX18	256KX36
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LQFP	LQFP	LQFP	BGA	BGA	BGA
Encapsulate equivalent code	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87	BGA119,7X17,50	BGA119,7X17,50	BGA119,7X17,50
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	GRID ARRAY	GRID ARRAY	GRID ARRAY
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	240	240	240	240	240	240
power supply	2.5,3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	2.5,3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.6 mm	1.6 mm	1.6 mm	2.41 mm	2.41 mm	2.41 mm
Maximum standby current	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A
Minimum standby current	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V
Maximum slew rate	0.38 mA	0.38 mA	0.38 mA	0.38 mA	0.38 mA	0.38 mA
Maximum supply voltage (Vsup)	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V
Minimum supply voltage (Vsup)	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING	BALL	BALL	BALL
Terminal pitch	0.65 mm	0.65 mm	0.65 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	QUAD	QUAD	QUAD	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	30	30	30	30	30	30
width	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm

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